Depletion-mode Quantum Dots in Intrinsic Silicon

Sergei Amitonov (Corresponding Author), Paul C. Spruijtenburg, Max W. S. Vervoort, Wilfred G. van der Wiel, Floris A. Zwanenburg (Corresponding Author)

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    73 Downloads (Pure)


    We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits.
    Original languageEnglish
    Article number023102
    JournalApplied physics letters
    Issue number2
    Publication statusPublished - 8 Jan 2018


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