Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.
Original languageEnglish
Title of host publication15th European Conference on Chemical Vapor Deposition (EUROCVD-15)
EditorsA. Devi, H. Parala, M.L. Hitchman, R. Fischer, M.D. Allendorf
Place of PublicationPennington, New Jersey, USA
PublisherElectro Chemical Society
Pages457-464
Number of pages8
ISBN (Print)1-56677-427-6
Publication statusPublished - Sep 2005
Event15th European Conference on Chemical Vapor Deposition 2005 - Bochum, Germany
Duration: 5 Sep 20059 Sep 2005
Conference number: 15

Publication series

NameElectrochemical Society Proceedings
PublisherElectrochemical Society
Volume2005-09

Conference

Conference15th European Conference on Chemical Vapor Deposition 2005
Abbreviated titleEuroCVD 2005
CountryGermany
CityBochum
Period5/09/059/09/05

Fingerprint

oxynitrides
integrated optics
phosphorus
silicon
annealing
hydrogen
ellipsometry
telecommunication
backscattering
flow velocity
infrared spectroscopy
vapor deposition
refractivity
spectroscopy

Keywords

  • IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
  • METIS-228226
  • IR-64744
  • EWI-12355

Cite this

Hussein, M. G., Worhoff, K., Sengo, G., & Driessen, A. (2005). Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. In A. Devi, H. Parala, M. L. Hitchman, R. Fischer, & M. D. Allendorf (Eds.), 15th European Conference on Chemical Vapor Deposition (EUROCVD-15) (pp. 457-464). (Electrochemical Society Proceedings; Vol. 2005-09). Pennington, New Jersey, USA: Electro Chemical Society.
Hussein, M.G. ; Worhoff, Kerstin ; Sengo, G. ; Driessen, A. / Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). editor / A. Devi ; H. Parala ; M.L. Hitchman ; R. Fischer ; M.D. Allendorf. Pennington, New Jersey, USA : Electro Chemical Society, 2005. pp. 457-464 (Electrochemical Society Proceedings).
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abstract = "Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2{\%} $SiH_4/N_2$ and 5{\%} $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.",
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Hussein, MG, Worhoff, K, Sengo, G & Driessen, A 2005, Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. in A Devi, H Parala, ML Hitchman, R Fischer & MD Allendorf (eds), 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). Electrochemical Society Proceedings, vol. 2005-09, Electro Chemical Society, Pennington, New Jersey, USA, pp. 457-464, 15th European Conference on Chemical Vapor Deposition 2005, Bochum, Germany, 5/09/05.

Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. / Hussein, M.G.; Worhoff, Kerstin; Sengo, G.; Driessen, A.

15th European Conference on Chemical Vapor Deposition (EUROCVD-15). ed. / A. Devi; H. Parala; M.L. Hitchman; R. Fischer; M.D. Allendorf. Pennington, New Jersey, USA : Electro Chemical Society, 2005. p. 457-464 (Electrochemical Society Proceedings; Vol. 2005-09).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

AU - Hussein, M.G.

AU - Worhoff, Kerstin

AU - Sengo, G.

AU - Driessen, A.

PY - 2005/9

Y1 - 2005/9

N2 - Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.

AB - Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.

KW - IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

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KW - IR-64744

KW - EWI-12355

M3 - Conference contribution

SN - 1-56677-427-6

T3 - Electrochemical Society Proceedings

SP - 457

EP - 464

BT - 15th European Conference on Chemical Vapor Deposition (EUROCVD-15)

A2 - Devi, A.

A2 - Parala, H.

A2 - Hitchman, M.L.

A2 - Fischer, R.

A2 - Allendorf, M.D.

PB - Electro Chemical Society

CY - Pennington, New Jersey, USA

ER -

Hussein MG, Worhoff K, Sengo G, Driessen A. Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. In Devi A, Parala H, Hitchman ML, Fischer R, Allendorf MD, editors, 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). Pennington, New Jersey, USA: Electro Chemical Society. 2005. p. 457-464. (Electrochemical Society Proceedings).