Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

M.G. Hussein; Kerstin Worhoff; G. Sengo; A. Driessen

Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

70 Downloads (Pure)

Abstract

Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.

Original language	English
Title of host publication	15th European Conference on Chemical Vapor Deposition (EUROCVD-15)
Editors	A. Devi, H. Parala, M.L. Hitchman, R. Fischer, M.D. Allendorf
Place of Publication	Pennington, New Jersey, USA
Publisher	Electro Chemical Society
Pages	457-464
Number of pages	8
ISBN (Print)	1-56677-427-6
Publication status	Published - Sept 2005
Event	15th European Conference on Chemical Vapor Deposition 2005 - Bochum, Germany Duration: 5 Sept 2005 → 9 Sept 2005 Conference number: 15

Publication series

Name	Electrochemical Society Proceedings
Publisher	Electrochemical Society
Volume	2005-09

Conference

Conference	15th European Conference on Chemical Vapor Deposition 2005
Abbreviated title	EuroCVD 2005
Country/Territory	Germany
City	Bochum
Period	5/09/05 → 9/09/05

Keywords

IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
METIS-228226
IR-64744
EWI-12355

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Hussein, M. G., Worhoff, K., Sengo, G., & Driessen, A. (2005). Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. In A. Devi, H. Parala, M. L. Hitchman, R. Fischer, & M. D. Allendorf (Eds.), 15th European Conference on Chemical Vapor Deposition (EUROCVD-15) (pp. 457-464). (Electrochemical Society Proceedings; Vol. 2005-09). Electro Chemical Society.

Hussein, M.G. ; Worhoff, Kerstin ; Sengo, G. et al. / Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). editor / A. Devi ; H. Parala ; M.L. Hitchman ; R. Fischer ; M.D. Allendorf. Pennington, New Jersey, USA : Electro Chemical Society, 2005. pp. 457-464 (Electrochemical Society Proceedings).

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title = "Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications",

abstract = "Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.",

keywords = "IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY, METIS-228226, IR-64744, EWI-12355",

author = "M.G. Hussein and Kerstin Worhoff and G. Sengo and A. Driessen",

year = "2005",

month = sep,

language = "English",

isbn = "1-56677-427-6",

series = "Electrochemical Society Proceedings",

publisher = "Electro Chemical Society",

pages = "457--464",

editor = "A. Devi and H. Parala and M.L. Hitchman and R. Fischer and M.D. Allendorf",

booktitle = "15th European Conference on Chemical Vapor Deposition (EUROCVD-15)",

note = "15th European Conference on Chemical Vapor Deposition 2005, EuroCVD 2005 ; Conference date: 05-09-2005 Through 09-09-2005",

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Hussein, MG, Worhoff, K, Sengo, G & Driessen, A 2005, Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. in A Devi, H Parala, ML Hitchman, R Fischer & MD Allendorf (eds), 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). Electrochemical Society Proceedings, vol. 2005-09, Electro Chemical Society, Pennington, New Jersey, USA, pp. 457-464, 15th European Conference on Chemical Vapor Deposition 2005, Bochum, Germany, 5/09/05.

Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. / Hussein, M.G.; Worhoff, Kerstin; Sengo, G. et al.
15th European Conference on Chemical Vapor Deposition (EUROCVD-15). ed. / A. Devi; H. Parala; M.L. Hitchman; R. Fischer; M.D. Allendorf. Pennington, New Jersey, USA: Electro Chemical Society, 2005. p. 457-464 (Electrochemical Society Proceedings; Vol. 2005-09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

AU - Hussein, M.G.

AU - Worhoff, Kerstin

AU - Sengo, G.

AU - Driessen, A.

N1 - Conference code: 15

PY - 2005/9

Y1 - 2005/9

N2 - Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.

AB - Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.

KW - IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

KW - METIS-228226

KW - IR-64744

KW - EWI-12355

M3 - Conference contribution

SN - 1-56677-427-6

T3 - Electrochemical Society Proceedings

SP - 457

EP - 464

BT - 15th European Conference on Chemical Vapor Deposition (EUROCVD-15)

A2 - Devi, A.

A2 - Parala, H.

A2 - Hitchman, M.L.

A2 - Fischer, R.

A2 - Allendorf, M.D.

PB - Electro Chemical Society

CY - Pennington, New Jersey, USA

T2 - 15th European Conference on Chemical Vapor Deposition 2005

Y2 - 5 September 2005 through 9 September 2005

ER -

Hussein MG, Worhoff K, Sengo G, Driessen A. Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. In Devi A, Parala H, Hitchman ML, Fischer R, Allendorf MD, editors, 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). Pennington, New Jersey, USA: Electro Chemical Society. 2005. p. 457-464. (Electrochemical Society Proceedings).

Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

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