Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications

M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    24 Downloads (Pure)

    Abstract

    Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.
    Original languageEnglish
    Title of host publication15th European Conference on Chemical Vapor Deposition (EUROCVD-15)
    EditorsA. Devi, H. Parala, M.L. Hitchman, R. Fischer, M.D. Allendorf
    Place of PublicationPennington, New Jersey, USA
    PublisherElectro Chemical Society
    Pages457-464
    Number of pages8
    ISBN (Print)1-56677-427-6
    Publication statusPublished - Sep 2005
    Event15th European Conference on Chemical Vapor Deposition 2005 - Bochum, Germany
    Duration: 5 Sep 20059 Sep 2005
    Conference number: 15

    Publication series

    NameElectrochemical Society Proceedings
    PublisherElectrochemical Society
    Volume2005-09

    Conference

    Conference15th European Conference on Chemical Vapor Deposition 2005
    Abbreviated titleEuroCVD 2005
    CountryGermany
    CityBochum
    Period5/09/059/09/05

    Fingerprint

    oxynitrides
    integrated optics
    phosphorus
    silicon
    annealing
    hydrogen
    ellipsometry
    telecommunication
    backscattering
    flow velocity
    infrared spectroscopy
    vapor deposition
    refractivity
    spectroscopy

    Keywords

    • IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
    • METIS-228226
    • IR-64744
    • EWI-12355

    Cite this

    Hussein, M. G., Worhoff, K., Sengo, G., & Driessen, A. (2005). Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. In A. Devi, H. Parala, M. L. Hitchman, R. Fischer, & M. D. Allendorf (Eds.), 15th European Conference on Chemical Vapor Deposition (EUROCVD-15) (pp. 457-464). (Electrochemical Society Proceedings; Vol. 2005-09). Pennington, New Jersey, USA: Electro Chemical Society.
    Hussein, M.G. ; Worhoff, Kerstin ; Sengo, G. ; Driessen, A. / Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). editor / A. Devi ; H. Parala ; M.L. Hitchman ; R. Fischer ; M.D. Allendorf. Pennington, New Jersey, USA : Electro Chemical Society, 2005. pp. 457-464 (Electrochemical Society Proceedings).
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    title = "Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications",
    abstract = "Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2{\%} $SiH_4/N_2$ and 5{\%} $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.",
    keywords = "IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY, METIS-228226, IR-64744, EWI-12355",
    author = "M.G. Hussein and Kerstin Worhoff and G. Sengo and A. Driessen",
    year = "2005",
    month = "9",
    language = "English",
    isbn = "1-56677-427-6",
    series = "Electrochemical Society Proceedings",
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    pages = "457--464",
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    Hussein, MG, Worhoff, K, Sengo, G & Driessen, A 2005, Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. in A Devi, H Parala, ML Hitchman, R Fischer & MD Allendorf (eds), 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). Electrochemical Society Proceedings, vol. 2005-09, Electro Chemical Society, Pennington, New Jersey, USA, pp. 457-464, 15th European Conference on Chemical Vapor Deposition 2005, Bochum, Germany, 5/09/05.

    Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. / Hussein, M.G.; Worhoff, Kerstin; Sengo, G.; Driessen, A.

    15th European Conference on Chemical Vapor Deposition (EUROCVD-15). ed. / A. Devi; H. Parala; M.L. Hitchman; R. Fischer; M.D. Allendorf. Pennington, New Jersey, USA : Electro Chemical Society, 2005. p. 457-464 (Electrochemical Society Proceedings; Vol. 2005-09).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

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    AU - Hussein, M.G.

    AU - Worhoff, Kerstin

    AU - Sengo, G.

    AU - Driessen, A.

    PY - 2005/9

    Y1 - 2005/9

    N2 - Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.

    AB - Phosphorus-doped silicon oxynitride layers have been deposited by a Plasma Enhanced Chemical Vapor Deposition process from $N_20$, 2% $SiH_4/N_2$ and 5% $PH_3/Ar$ gaseous mixtures. The $PH_3/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. As deposited and annealed (600, 800, 900 and 1000 °C) layers were characterized by Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy and spectroscopic ellipsometry. In this way the refractive index could be determined as well as the amount of hydrogen that is responsible for enhanced absorption in the 3rd telecommunication window around 1550 nm. The N-H bonds concentration was found to decrease with the phosphorus concentration. Furthermore the bonded hydrogen in the entire P-doped layers have been eliminated after annealing at 1000 °C, while undoped SiON layers require annealing at 1150 °C.

    KW - IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY

    KW - METIS-228226

    KW - IR-64744

    KW - EWI-12355

    M3 - Conference contribution

    SN - 1-56677-427-6

    T3 - Electrochemical Society Proceedings

    SP - 457

    EP - 464

    BT - 15th European Conference on Chemical Vapor Deposition (EUROCVD-15)

    A2 - Devi, A.

    A2 - Parala, H.

    A2 - Hitchman, M.L.

    A2 - Fischer, R.

    A2 - Allendorf, M.D.

    PB - Electro Chemical Society

    CY - Pennington, New Jersey, USA

    ER -

    Hussein MG, Worhoff K, Sengo G, Driessen A. Deposition and characterization of PECVD phosphorus doped silicon oxynitride layers for integrated optics applications. In Devi A, Parala H, Hitchman ML, Fischer R, Allendorf MD, editors, 15th European Conference on Chemical Vapor Deposition (EUROCVD-15). Pennington, New Jersey, USA: Electro Chemical Society. 2005. p. 457-464. (Electrochemical Society Proceedings).