Deposition and detection of particles during integrated circuit manufacturing

Faisal Wali; D. Martin Knotter; John J. Kelly; F.G. Kuper

Deposition and detection of particles during integrated circuit manufacturing

Faisal Wali, D. Martin Knotter, John J. Kelly, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Abstract—Deposition mechanism of silica particles on silicon wafers was investigated by depositing specially prepared mono-dispersed particles (mean diameter = 330 nm). To measure particles of the size below the detection limit of our particle measurement tools, silica particles with luminance core were prepared. Three phenomena of deposition were discerned: sedimentation (diffusion driven), printing due to hydrodynamic forces at gas-solid-liquid interface, and dry in of carry-over layer.

Original language	English
Title of host publication	Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006
Subtitle of host publication	November 23-24, 2006, Veldhoven, the Netherlands
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	483-487
Number of pages	5
ISBN (Print)	90-73461-44-8
Publication status	Published - 27 Nov 2006
Event	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 - Veldhoven, Netherlands Duration: 23 Nov 2006 → 24 Nov 2006 Conference number: 9

Workshop

Workshop	9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006
Country/Territory	Netherlands
City	Veldhoven
Period	23/11/06 → 24/11/06

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield

Cite this

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title = "Deposition and detection of particles during integrated circuit manufacturing",

abstract = "Abstract—Deposition mechanism of silica particles on silicon wafers was investigated by depositing specially prepared mono-dispersed particles (mean diameter = 330 nm). To measure particles of the size below the detection limit of our particle measurement tools, silica particles with luminance core were prepared. Three phenomena of deposition were discerned: sedimentation (diffusion driven), printing due to hydrodynamic forces at gas-solid-liquid interface, and dry in of carry-over layer.",

keywords = "SC-ICRY: Integrated Circuit Reliability and Yield",

author = "Faisal Wali and Knotter, \{D. Martin\} and Kelly, \{John J.\} and F.G. Kuper",

year = "2006",

month = nov,

day = "27",

language = "English",

isbn = "90-73461-44-8",

pages = "483--487",

booktitle = "Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006",

publisher = "STW",

note = "9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006 ; Conference date: 23-11-2006 Through 24-11-2006",

}

Wali, F, Knotter, DM, Kelly, JJ & Kuper, FG 2006, Deposition and detection of particles during integrated circuit manufacturing. in Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006: November 23-24, 2006, Veldhoven, the Netherlands. STW, Utrecht, The Netherlands, pp. 483-487, 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006, Veldhoven, Netherlands, 23/11/06.

Deposition and detection of particles during integrated circuit manufacturing. / Wali, Faisal; Knotter, D. Martin; Kelly, John J. et al.
Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006: November 23-24, 2006, Veldhoven, the Netherlands. Utrecht, The Netherlands: STW, 2006. p. 483-487.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Deposition and detection of particles during integrated circuit manufacturing

AU - Wali, Faisal

AU - Knotter, D. Martin

AU - Kelly, John J.

AU - Kuper, F.G.

N1 - Conference code: 9

PY - 2006/11/27

Y1 - 2006/11/27

N2 - Abstract—Deposition mechanism of silica particles on silicon wafers was investigated by depositing specially prepared mono-dispersed particles (mean diameter = 330 nm). To measure particles of the size below the detection limit of our particle measurement tools, silica particles with luminance core were prepared. Three phenomena of deposition were discerned: sedimentation (diffusion driven), printing due to hydrodynamic forces at gas-solid-liquid interface, and dry in of carry-over layer.

AB - Abstract—Deposition mechanism of silica particles on silicon wafers was investigated by depositing specially prepared mono-dispersed particles (mean diameter = 330 nm). To measure particles of the size below the detection limit of our particle measurement tools, silica particles with luminance core were prepared. Three phenomena of deposition were discerned: sedimentation (diffusion driven), printing due to hydrodynamic forces at gas-solid-liquid interface, and dry in of carry-over layer.

KW - SC-ICRY: Integrated Circuit Reliability and Yield

M3 - Conference contribution

SN - 90-73461-44-8

SP - 483

EP - 487

BT - Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2006

PB - STW

CY - Utrecht, The Netherlands

T2 - 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006

Y2 - 23 November 2006 through 24 November 2006

ER -

Deposition and detection of particles during integrated circuit manufacturing

Abstract

Workshop

Keywords

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