Deposition and Etching of SiF2 on Si Surface: MD Study

X. Chen; X.D. Lu; P.N. He; C.L. Zhao; W. Sun; P. Zhang; F. Gou

doi:10.1016/j.phpro.2012.03.652

Deposition and Etching of SiF2 on Si Surface: MD Study

X. Chen
, X.D. Lu
, P.N. He
, C.L. Zhao
, W. Sun
, P. Zhang
, F. Gou

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

1 Downloads (Pure)

Abstract

Molecular dynamics simulations were performed to investigate SiF2 continuously bombarding the amorphous silicon surface with energies of 10, 50 and 100 eV at normal incidence at 300 K. With increasing incident energy, the deposition rate and etch rate increases. In the deposited amorphous films, SiF species is dominant. With increasing incident energy, the fraction of SiF2 decreases, while the fraction of SiF3 in the film increases

Original language	Undefined
Pages (from-to)	885-890
Number of pages	6
Journal	Physics procedia
Volume	32
DOIs	https://doi.org/10.1016/j.phpro.2012.03.652
Publication status	Published - 2012

Keywords

METIS-298223
IR-100026

Access to Document

10.1016/j.phpro.2012.03.652

Cite this

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title = "Deposition and Etching of SiF2 on Si Surface: MD Study",

abstract = "Molecular dynamics simulations were performed to investigate SiF2 continuously bombarding the amorphous silicon surface with energies of 10, 50 and 100 eV at normal incidence at 300 K. With increasing incident energy, the deposition rate and etch rate increases. In the deposited amorphous films, SiF species is dominant. With increasing incident energy, the fraction of SiF2 decreases, while the fraction of SiF3 in the film increases",

keywords = "METIS-298223, IR-100026",

author = "X. Chen and X.D. Lu and P.N. He and C.L. Zhao and W. Sun and P. Zhang and F. Gou",

note = "The 18th International Vacuum Congress (IVC-18) ",

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T1 - Deposition and Etching of SiF2 on Si Surface: MD Study

AU - Chen, X.

AU - Lu, X.D.

AU - He, P.N.

AU - Zhao, C.L.

AU - Sun, W.

AU - Zhang, P.

AU - Gou, F.

N1 - The 18th International Vacuum Congress (IVC-18)

PY - 2012

Y1 - 2012

N2 - Molecular dynamics simulations were performed to investigate SiF2 continuously bombarding the amorphous silicon surface with energies of 10, 50 and 100 eV at normal incidence at 300 K. With increasing incident energy, the deposition rate and etch rate increases. In the deposited amorphous films, SiF species is dominant. With increasing incident energy, the fraction of SiF2 decreases, while the fraction of SiF3 in the film increases

AB - Molecular dynamics simulations were performed to investigate SiF2 continuously bombarding the amorphous silicon surface with energies of 10, 50 and 100 eV at normal incidence at 300 K. With increasing incident energy, the deposition rate and etch rate increases. In the deposited amorphous films, SiF species is dominant. With increasing incident energy, the fraction of SiF2 decreases, while the fraction of SiF3 in the film increases

KW - METIS-298223

KW - IR-100026

U2 - 10.1016/j.phpro.2012.03.652

DO - 10.1016/j.phpro.2012.03.652

M3 - Article

SN - 1875-3892

VL - 32

SP - 885

EP - 890

JO - Physics procedia

JF - Physics procedia

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