Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C

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    Abstract

    Silicon oxynitride films were deposited at 150 °C using inductively coupled plasma enhanced chemical vapor deposition, aiming towards low-temperature fabrication of waveguide material with low optical losses in the visible and near-infrared range. The influence of the deposition parameters such as SiH4 fraction, deposition pressure and Ar/N2 ratio on the film properties was experimentally investigated using spectroscopic ellipsometry, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. These findings were consistent with the chemical modeling of gas-phase composition of the plasma thereby leading to better understanding of the deposition process.
    Original languageUndefined
    Pages (from-to)46-50
    Number of pages5
    JournalSurface and coatings technology
    Volume230
    DOIs
    Publication statusPublished - 15 Sep 2013

    Keywords

    • EWI-23593
    • Waveguide
    • IR-87019
    • Silicon oxynitride
    • METIS-297784
    • PECVD

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