Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C

    Research output: Contribution to journalArticleAcademicpeer-review

    4 Citations (Scopus)

    Abstract

    Silicon oxynitride films were deposited at 150 °C using inductively coupled plasma enhanced chemical vapor deposition, aiming towards low-temperature fabrication of waveguide material with low optical losses in the visible and near-infrared range. The influence of the deposition parameters such as SiH4 fraction, deposition pressure and Ar/N2 ratio on the film properties was experimentally investigated using spectroscopic ellipsometry, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. These findings were consistent with the chemical modeling of gas-phase composition of the plasma thereby leading to better understanding of the deposition process.
    Original languageUndefined
    Pages (from-to)46-50
    Number of pages5
    JournalSurface and coatings technology
    Volume230
    DOIs
    Publication statusPublished - 15 Sep 2013

    Keywords

    • EWI-23593
    • Waveguide
    • IR-87019
    • Silicon oxynitride
    • METIS-297784
    • PECVD

    Cite this

    @article{95be779eab7242dd868f7647a4e4a2d2,
    title = "Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C",
    abstract = "Silicon oxynitride films were deposited at 150 °C using inductively coupled plasma enhanced chemical vapor deposition, aiming towards low-temperature fabrication of waveguide material with low optical losses in the visible and near-infrared range. The influence of the deposition parameters such as SiH4 fraction, deposition pressure and Ar/N2 ratio on the film properties was experimentally investigated using spectroscopic ellipsometry, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. These findings were consistent with the chemical modeling of gas-phase composition of the plasma thereby leading to better understanding of the deposition process.",
    keywords = "EWI-23593, Waveguide, IR-87019, Silicon oxynitride, METIS-297784, PECVD",
    author = "B. Rangarajan and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    note = "eemcs-eprint-23593",
    year = "2013",
    month = "9",
    day = "15",
    doi = "10.1016/j.surfcoat.2013.06.010",
    language = "Undefined",
    volume = "230",
    pages = "46--50",
    journal = "Surface and coatings technology",
    issn = "0257-8972",
    publisher = "Elsevier",

    }

    Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C. / Rangarajan, B.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

    In: Surface and coatings technology, Vol. 230, 15.09.2013, p. 46-50.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C

    AU - Rangarajan, B.

    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

    N1 - eemcs-eprint-23593

    PY - 2013/9/15

    Y1 - 2013/9/15

    N2 - Silicon oxynitride films were deposited at 150 °C using inductively coupled plasma enhanced chemical vapor deposition, aiming towards low-temperature fabrication of waveguide material with low optical losses in the visible and near-infrared range. The influence of the deposition parameters such as SiH4 fraction, deposition pressure and Ar/N2 ratio on the film properties was experimentally investigated using spectroscopic ellipsometry, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. These findings were consistent with the chemical modeling of gas-phase composition of the plasma thereby leading to better understanding of the deposition process.

    AB - Silicon oxynitride films were deposited at 150 °C using inductively coupled plasma enhanced chemical vapor deposition, aiming towards low-temperature fabrication of waveguide material with low optical losses in the visible and near-infrared range. The influence of the deposition parameters such as SiH4 fraction, deposition pressure and Ar/N2 ratio on the film properties was experimentally investigated using spectroscopic ellipsometry, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. These findings were consistent with the chemical modeling of gas-phase composition of the plasma thereby leading to better understanding of the deposition process.

    KW - EWI-23593

    KW - Waveguide

    KW - IR-87019

    KW - Silicon oxynitride

    KW - METIS-297784

    KW - PECVD

    U2 - 10.1016/j.surfcoat.2013.06.010

    DO - 10.1016/j.surfcoat.2013.06.010

    M3 - Article

    VL - 230

    SP - 46

    EP - 50

    JO - Surface and coatings technology

    JF - Surface and coatings technology

    SN - 0257-8972

    ER -