Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD

A. Boogaard, R. Roesthuis, I. Brunets, Antonius A.I. Aarnink, Alexeij Y. Kovalgin, J. Holleman, Robertus A.M. Wolters, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. The gas phase contained 0.08% of SiH4 and 18% of N2O. We observed that, at a total pressure of 1 Pa, the oxide films were formed with a density equal to that of thermally grown oxide. The films had a low oxide charge. Deposition at higher pressures resulted in the formation of oxides having a lower density than the film deposited at 1 Pa, and a higher oxide charge. We measured a strong dependence of the oxide charge on the film thickness. The films deposited at 1 Pa further exhibited leakage currents at an electric field strength of 6.5 MV/cm which were comparable to the leakage currents known for thermally grown (1000°C) oxides. The film deposited at 2 Pa also exhibited a low leakage current, but the current increase was observed at lower electric fields compared to the 1 Pa film. The films deposited at 6 Pa exhibited significantly higher leakage currents.
    Original languageUndefined
    Title of host publicationProceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages452-456
    Number of pages4
    ISBN (Print)978-90-73461-56-7
    Publication statusPublished - 27 Nov 2008
    Event11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 11

    Publication series

    Name
    PublisherTechnology Foundation STW
    NumberWoTUG-31

    Workshop

    Workshop11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0828/11/08

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-254993
    • IR-62606
    • EWI-14600

    Cite this

    Boogaard, A., Roesthuis, R., Brunets, I., Aarnink, A. A. I., Kovalgin, A. Y., Holleman, J., ... Schmitz, J. (2008). Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) (pp. 452-456). Utrecht, The Netherlands: STW.
    Boogaard, A. ; Roesthuis, R. ; Brunets, I. ; Aarnink, Antonius A.I. ; Kovalgin, Alexeij Y. ; Holleman, J. ; Wolters, Robertus A.M. ; Schmitz, Jurriaan. / Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands : STW, 2008. pp. 452-456
    @inproceedings{304b5c516c584cd6bf98e19c5c98459e,
    title = "Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD",
    abstract = "Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. The gas phase contained 0.08{\%} of SiH4 and 18{\%} of N2O. We observed that, at a total pressure of 1 Pa, the oxide films were formed with a density equal to that of thermally grown oxide. The films had a low oxide charge. Deposition at higher pressures resulted in the formation of oxides having a lower density than the film deposited at 1 Pa, and a higher oxide charge. We measured a strong dependence of the oxide charge on the film thickness. The films deposited at 1 Pa further exhibited leakage currents at an electric field strength of 6.5 MV/cm which were comparable to the leakage currents known for thermally grown (1000°C) oxides. The film deposited at 2 Pa also exhibited a low leakage current, but the current increase was observed at lower electric fields compared to the 1 Pa film. The films deposited at 6 Pa exhibited significantly higher leakage currents.",
    keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-254993, IR-62606, EWI-14600",
    author = "A. Boogaard and R. Roesthuis and I. Brunets and Aarnink, {Antonius A.I.} and Kovalgin, {Alexeij Y.} and J. Holleman and Wolters, {Robertus A.M.} and Jurriaan Schmitz",
    year = "2008",
    month = "11",
    day = "27",
    language = "Undefined",
    isbn = "978-90-73461-56-7",
    publisher = "STW",
    number = "WoTUG-31",
    pages = "452--456",
    booktitle = "Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)",

    }

    Boogaard, A, Roesthuis, R, Brunets, I, Aarnink, AAI, Kovalgin, AY, Holleman, J, Wolters, RAM & Schmitz, J 2008, Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). STW, Utrecht, The Netherlands, pp. 452-456, 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, Veldhoven, Netherlands, 27/11/08.

    Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. / Boogaard, A.; Roesthuis, R.; Brunets, I.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Holleman, J.; Wolters, Robertus A.M.; Schmitz, Jurriaan.

    Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands : STW, 2008. p. 452-456.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD

    AU - Boogaard, A.

    AU - Roesthuis, R.

    AU - Brunets, I.

    AU - Aarnink, Antonius A.I.

    AU - Kovalgin, Alexeij Y.

    AU - Holleman, J.

    AU - Wolters, Robertus A.M.

    AU - Schmitz, Jurriaan

    PY - 2008/11/27

    Y1 - 2008/11/27

    N2 - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. The gas phase contained 0.08% of SiH4 and 18% of N2O. We observed that, at a total pressure of 1 Pa, the oxide films were formed with a density equal to that of thermally grown oxide. The films had a low oxide charge. Deposition at higher pressures resulted in the formation of oxides having a lower density than the film deposited at 1 Pa, and a higher oxide charge. We measured a strong dependence of the oxide charge on the film thickness. The films deposited at 1 Pa further exhibited leakage currents at an electric field strength of 6.5 MV/cm which were comparable to the leakage currents known for thermally grown (1000°C) oxides. The film deposited at 2 Pa also exhibited a low leakage current, but the current increase was observed at lower electric fields compared to the 1 Pa film. The films deposited at 6 Pa exhibited significantly higher leakage currents.

    AB - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. The gas phase contained 0.08% of SiH4 and 18% of N2O. We observed that, at a total pressure of 1 Pa, the oxide films were formed with a density equal to that of thermally grown oxide. The films had a low oxide charge. Deposition at higher pressures resulted in the formation of oxides having a lower density than the film deposited at 1 Pa, and a higher oxide charge. We measured a strong dependence of the oxide charge on the film thickness. The films deposited at 1 Pa further exhibited leakage currents at an electric field strength of 6.5 MV/cm which were comparable to the leakage currents known for thermally grown (1000°C) oxides. The film deposited at 2 Pa also exhibited a low leakage current, but the current increase was observed at lower electric fields compared to the 1 Pa film. The films deposited at 6 Pa exhibited significantly higher leakage currents.

    KW - SC-ICF: Integrated Circuit Fabrication

    KW - METIS-254993

    KW - IR-62606

    KW - EWI-14600

    M3 - Conference contribution

    SN - 978-90-73461-56-7

    SP - 452

    EP - 456

    BT - Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)

    PB - STW

    CY - Utrecht, The Netherlands

    ER -

    Boogaard A, Roesthuis R, Brunets I, Aarnink AAI, Kovalgin AY, Holleman J et al. Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands: STW. 2008. p. 452-456