Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia

Research output: Contribution to conferencePaperAcademic

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Abstract

Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.
Original languageEnglish
Number of pages1
Publication statusPublished - 25 Jul 2016
Event16th International Conference on Atomic Layer Deposition, ALD 2016 - Convention Centre Dublin, Dublin, Ireland
Duration: 24 Jul 201627 Jul 2016
Conference number: 16
http://ald2016.com/speakervideos/

Conference

Conference16th International Conference on Atomic Layer Deposition, ALD 2016
Abbreviated titleALD 2016
CountryIreland
CityDublin
Period24/07/1627/07/16
Other24-27 July 2016
Internet address

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gallium nitrides
gallium
ammonia
pulses
carbon
atomic layer epitaxy
industries
nitrogen
fabrication
electrical resistivity
electronics

Keywords

  • IR-103991
  • EWI-27793

Cite this

Banerjee, S., Aarnink, A. A. I., Kip, G. A. M., Gravesteijn, D. J., Schmitz, J., & Kovalgin, A. Y. (2016). Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.
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title = "Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia",
abstract = "Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.",
keywords = "IR-103991, EWI-27793",
author = "Sourish Banerjee and Aarnink, {Antonius A.I.} and Kip, {Gerhardus A.M.} and Gravesteijn, {Dirk J} and Jurriaan Schmitz and Kovalgin, {Alexeij Y.}",
year = "2016",
month = "7",
day = "25",
language = "English",
note = "16th International Conference on Atomic Layer Deposition, ALD 2016, ALD 2016 ; Conference date: 24-07-2016 Through 27-07-2016",
url = "http://ald2016.com/speakervideos/",

}

Banerjee, S, Aarnink, AAI, Kip, GAM, Gravesteijn, DJ, Schmitz, J & Kovalgin, AY 2016, 'Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia' Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland, 24/07/16 - 27/07/16, .

Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. / Banerjee, Sourish; Aarnink, Antonius A.I.; Kip, Gerhardus A.M.; Gravesteijn, Dirk J; Schmitz, Jurriaan; Kovalgin, Alexeij Y.

2016. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.

Research output: Contribution to conferencePaperAcademic

TY - CONF

T1 - Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia

AU - Banerjee, Sourish

AU - Aarnink, Antonius A.I.

AU - Kip, Gerhardus A.M.

AU - Gravesteijn, Dirk J

AU - Schmitz, Jurriaan

AU - Kovalgin, Alexeij Y.

PY - 2016/7/25

Y1 - 2016/7/25

N2 - Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.

AB - Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.

KW - IR-103991

KW - EWI-27793

M3 - Paper

ER -

Banerjee S, Aarnink AAI, Kip GAM, Gravesteijn DJ, Schmitz J, Kovalgin AY. Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. 2016. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.