Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia

    Research output: Contribution to conferencePaper

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    Abstract

    Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.
    Original languageEnglish
    Number of pages1
    Publication statusPublished - 25 Jul 2016
    Event16th International Conference on Atomic Layer Deposition, ALD 2016 - Convention Centre Dublin, Dublin, Ireland
    Duration: 24 Jul 201627 Jul 2016
    Conference number: 16
    http://ald2016.com/speakervideos/

    Conference

    Conference16th International Conference on Atomic Layer Deposition, ALD 2016
    Abbreviated titleALD 2016
    CountryIreland
    CityDublin
    Period24/07/1627/07/16
    Other24-27 July 2016
    Internet address

    Fingerprint

    gallium nitrides
    gallium
    ammonia
    pulses
    carbon
    atomic layer epitaxy
    industries
    nitrogen
    fabrication
    electrical resistivity
    electronics

    Keywords

    • IR-103991
    • EWI-27793

    Cite this

    Banerjee, S., Aarnink, A. A. I., Kip, G. A. M., Gravesteijn, D. J., Schmitz, J., & Kovalgin, A. Y. (2016). Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.
    @conference{9cab0f7ff758432b824640acd2b4aad4,
    title = "Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia",
    abstract = "Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.",
    keywords = "IR-103991, EWI-27793",
    author = "Sourish Banerjee and Aarnink, {Antonius A.I.} and Kip, {Gerhardus A.M.} and Gravesteijn, {Dirk J} and Jurriaan Schmitz and Kovalgin, {Alexeij Y.}",
    year = "2016",
    month = "7",
    day = "25",
    language = "English",
    note = "16th International Conference on Atomic Layer Deposition, ALD 2016, ALD 2016 ; Conference date: 24-07-2016 Through 27-07-2016",
    url = "http://ald2016.com/speakervideos/",

    }

    Banerjee, S, Aarnink, AAI, Kip, GAM, Gravesteijn, DJ, Schmitz, J & Kovalgin, AY 2016, 'Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia' Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland, 24/07/16 - 27/07/16, .

    Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. / Banerjee, Sourish; Aarnink, Antonius A.I.; Kip, Gerhardus A.M.; Gravesteijn, Dirk J; Schmitz, Jurriaan; Kovalgin, Alexeij Y.

    2016. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.

    Research output: Contribution to conferencePaper

    TY - CONF

    T1 - Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia

    AU - Banerjee, Sourish

    AU - Aarnink, Antonius A.I.

    AU - Kip, Gerhardus A.M.

    AU - Gravesteijn, Dirk J

    AU - Schmitz, Jurriaan

    AU - Kovalgin, Alexeij Y.

    PY - 2016/7/25

    Y1 - 2016/7/25

    N2 - Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.

    AB - Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.

    KW - IR-103991

    KW - EWI-27793

    M3 - Paper

    ER -

    Banerjee S, Aarnink AAI, Kip GAM, Gravesteijn DJ, Schmitz J, Kovalgin AY. Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. 2016. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.