Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN  or as a dopant in GaN , can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.
|Number of pages||1|
|Publication status||Published - 25 Jul 2016|
|Event||16th International Conference on Atomic Layer Deposition, ALD 2016 - Convention Centre Dublin, Dublin, Ireland|
Duration: 24 Jul 2016 → 27 Jul 2016
Conference number: 16
|Conference||16th International Conference on Atomic Layer Deposition, ALD 2016|
|Abbreviated title||ALD 2016|
|Period||24/07/16 → 27/07/16|
|Other||24-27 July 2016|
Banerjee, S., Aarnink, A. A. I., Kip, G. A. M., Gravesteijn, D. J., Schmitz, J., & Kovalgin, A. Y. (2016). Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.