Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia

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    Abstract

    Gallium nitride (GaN) is a semiconductor with broad applications in the (opto-)electronic industry. State-of-the-art fabrication of GaN demands a nanometer-level control over layer thickness, which can be achieved with atomic layer deposition (ALD). Introducing carbon (C) into GaN layers, similar to introducing C into BN [1] or as a dopant in GaN [2], can facilitate control over material properties such as the band-gap and resistivity, respectively. In this work, we report on our results obtained from thermal deposition of layers, containing varying concentration of gallium (Ga), carbon (C) and nitrogen (N), from trimethylgallium (TMG) and ammonia (NH3) precursors. The precursors were sequentially introduced in a pulsed mode, i.e., without mixing them.
    Original languageEnglish
    Number of pages1
    Publication statusPublished - 25 Jul 2016
    Event16th International Conference on Atomic Layer Deposition, ALD 2016 - Convention Centre Dublin, Dublin, Ireland
    Duration: 24 Jul 201627 Jul 2016
    Conference number: 16
    http://ald2016.com/speakervideos/

    Conference

    Conference16th International Conference on Atomic Layer Deposition, ALD 2016
    Abbreviated titleALD 2016
    CountryIreland
    CityDublin
    Period24/07/1627/07/16
    Other24-27 July 2016
    Internet address

    Keywords

    • IR-103991
    • EWI-27793

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  • Cite this

    Banerjee, S., Aarnink, A. A. I., Kip, G. A. M., Gravesteijn, D. J., Schmitz, J., & Kovalgin, A. Y. (2016). Deposition of thin layers containing Ga, C and N by sequential pulses of Trimethylgallium and Ammonia. Paper presented at 16th International Conference on Atomic Layer Deposition, ALD 2016, Dublin, Ireland.