Deposition of TiN films in a batch reactor

Albert Hasper (Inventor), Gert-Jan Snijders (Inventor), Lieve Vandezande (Inventor), Marinus J. De Blank (Inventor), Radko Gerard Bankras (Inventor)

    Research output: Patent

    20 Downloads (Pure)

    Abstract

    Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
    Original languageEnglish
    Patent numberUS7732350
    Priority date8/06/10
    Publication statusAccepted/In press - 8 Jun 2010

    Keywords

    • METIS-276304
    • IR-75694
    • SC-ICF: Integrated Circuit Fabrication
    • EWI-19365

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