Deposition of TiN films in a batch reactor

Albert Hasper; Gert-Jan Snijders; Lieve Vandezande; Marinus J. De Blank; Radko Gerard Bankras

Deposition of TiN films in a batch reactor

Albert Hasper (Inventor), Gert-Jan Snijders (Inventor), Lieve Vandezande (Inventor), Marinus J. De Blank (Inventor), Radko Gerard Bankras (Inventor)

Research output: Patent

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Abstract

Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Original language	English
Patent number	US7732350
Priority date	8/06/10
Publication status	Accepted/In press - 8 Jun 2010

Keywords

METIS-276304
IR-75694
SC-ICF: Integrated Circuit Fabrication
EWI-19365

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Cite this

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title = "Deposition of TiN films in a batch reactor",

abstract = "Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.",

keywords = "METIS-276304, IR-75694, SC-ICF: Integrated Circuit Fabrication, EWI-19365",

author = "Albert Hasper and Gert-Jan Snijders and Lieve Vandezande and {De Blank}, {Marinus J.} and Bankras, {Radko Gerard}",

year = "2010",

month = jun,

day = "8",

language = "English",

type = "Patent",

note = "US7732350",

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TY - PAT

T1 - Deposition of TiN films in a batch reactor

AU - Hasper, Albert

AU - Snijders, Gert-Jan

AU - Vandezande, Lieve

AU - De Blank, Marinus J.

AU - Bankras, Radko Gerard

PY - 2010/6/8

Y1 - 2010/6/8

N2 - Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

AB - Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

KW - METIS-276304

KW - IR-75694

KW - SC-ICF: Integrated Circuit Fabrication

KW - EWI-19365

M3 - Patent

M1 - US7732350

ER -

Deposition of TiN films in a batch reactor

Abstract

Keywords

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