Deposition of TiN films in a batch reactor

Albert Hasper; Gert-Jan Snijders; Lieve Vandezande; Marinus J. De Blank; Radko Gerard Bankras

Deposition of TiN films in a batch reactor

Albert Hasper (Inventor), Gert-Jan Snijders (Inventor), Lieve Vandezande (Inventor), Marinus J. De Blank (Inventor), Radko Gerard Bankras (Inventor)

Research output: Patent

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Abstract

Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Original language	English
Patent number	US20060634043
Priority date	23/03/06
Publication status	Submitted - 4 Dec 2006

Keywords

SC-ICF: Integrated Circuit Fabrication

Access to Document

US2006060137A1Final published version, 829 KB

Cite this

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title = "Deposition of TiN films in a batch reactor",

abstract = "Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.",

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T1 - Deposition of TiN films in a batch reactor

AU - Hasper, Albert

AU - Snijders, Gert-Jan

AU - Vandezande, Lieve

AU - De Blank, Marinus J.

AU - Bankras, Radko Gerard

PY - 2006/12/4

Y1 - 2006/12/4

N2 - Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

AB - Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

KW - SC-ICF: Integrated Circuit Fabrication

M3 - Patent

M1 - US20060634043

ER -