Abstract
The analysis and design of a highly-efficient 80 V class-D power stage design in a 0.14 μm SOI-based BCD process is described. It features immunity to the on-chip supply bounce, realized by internally regulated floating supplies, variable driving strength for the gate driver, and an efficient 2-step level shifter design. Fast switching transition and low switching loss are achieved with 94% peak efficiency for the complete class-D power stage in the realized chip.
| Original language | English |
|---|---|
| Pages (from-to) | 1514-1524 |
| Number of pages | 11 |
| Journal | IEEE journal of solid-state circuits |
| Volume | 49 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2014 |
Keywords
- EWI-24886
- IR-91436
- METIS-305930