TY - JOUR
T1 - Design and analysis of single-event tolerant slave latches for enhanced scan delay testing
AU - Lu, Y.
AU - Lombardi, F.
AU - Pontarelli, S.
AU - Ottavi, M.
PY - 2014
Y1 - 2014
N2 - The last few years have seen the development and fabrication of nanoscale circuits at high density and low power. Following a single-event upset (SEU), so-called soft errors due to internal and externally induced phenomena (such as α-particles and cosmic rays in adverse environments) have been reported during system operation; this is especially deleterious for storage elements such as flip-flops. To reduce the impact of a soft error on flip-flops, hardening techniques have been utilized. This paper proposes two new slave latches for improving the SEU tolerance of a flip-flop in scan delay testing. The two proposed slave latches utilize additional circuitry to increase the critical charge of the flip-flop compared to designs found in the technical literature. When used in a flip-flop, the first (second) latch design achieves a 5.6 (2.4) times larger critical charge with 11% (4%) delay and 16% (9%) power consumption overhead at 32-nm feature size, as compared with the best design found in the technical literature. Moreover, it is shown that the proposed slave latches have also superior performance in the presence of a single event with a multiple-node upset.
AB - The last few years have seen the development and fabrication of nanoscale circuits at high density and low power. Following a single-event upset (SEU), so-called soft errors due to internal and externally induced phenomena (such as α-particles and cosmic rays in adverse environments) have been reported during system operation; this is especially deleterious for storage elements such as flip-flops. To reduce the impact of a soft error on flip-flops, hardening techniques have been utilized. This paper proposes two new slave latches for improving the SEU tolerance of a flip-flop in scan delay testing. The two proposed slave latches utilize additional circuitry to increase the critical charge of the flip-flop compared to designs found in the technical literature. When used in a flip-flop, the first (second) latch design achieves a 5.6 (2.4) times larger critical charge with 11% (4%) delay and 16% (9%) power consumption overhead at 32-nm feature size, as compared with the best design found in the technical literature. Moreover, it is shown that the proposed slave latches have also superior performance in the presence of a single event with a multiple-node upset.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84896442239&partnerID=MN8TOARS
U2 - 10.1109/TDMR.2013.2266543
DO - 10.1109/TDMR.2013.2266543
M3 - Article
SN - 1530-4388
VL - 14
SP - 333
EP - 343
JO - IEEE transactions on device and materials reliability
JF - IEEE transactions on device and materials reliability
IS - 1
ER -