Design and characterisation of high-performance 0.13 μm NMOS Devices

J. Schmitz; G.M. Paulzen; D.J. Gravesteijn; A.H. Montree; P.H. Woerlee

Design and characterisation of high-performance 0.13 μm NMOS Devices

J. Schmitz^*
, G.M. Paulzen
, D.J. Gravesteijn
, A.H. Montree
, P.H. Woerlee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

40 Downloads (Pure)

Abstract

We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.

Original language	English
Title of host publication	ESSDERC 1996
Subtitle of host publication	Proceedings of the 26th European Solid State Device Research Conference
Editors	Massimo Rudan, Giorgio Baccarani
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	329-332
Number of pages	4
ISBN (Print)	9782863321966
Publication status	Published - 1 Jan 1996
Externally published	Yes
Event	26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy Duration: 9 Sept 1996 → 11 Sept 1996 Conference number: 26

Conference

Conference	26th European Solid State Device Research Conference, ESSDERC 1996
Abbreviated title	ESSDERC
Country/Territory	Italy
City	Bologna
Period	9/09/96 → 11/09/96

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Schmitz1996designFinal published version, 1.04 MB

https://ieeexplore.ieee.org/document/5437045

Cite this

@inproceedings{a614241e9575401f80389aa9f421746c,

title = "Design and characterisation of high-performance 0.13 μm NMOS Devices",

abstract = "We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.",

author = "J. Schmitz and G.M. Paulzen and D.J. Gravesteijn and A.H. Montree and P.H. Woerlee",

year = "1996",

month = jan,

day = "1",

language = "English",

isbn = "9782863321966",

pages = "329--332",

editor = "Massimo Rudan and Giorgio Baccarani",

booktitle = "ESSDERC 1996",

publisher = "IEEE",

address = "United States",

note = "26th European Solid State Device Research Conference, ESSDERC 1996, ESSDERC ; Conference date: 09-09-1996 Through 11-09-1996",

}

Schmitz, J, Paulzen, GM, Gravesteijn, DJ, Montree, AH & Woerlee, PH 1996, Design and characterisation of high-performance 0.13 μm NMOS Devices. in M Rudan & G Baccarani (eds), ESSDERC 1996: Proceedings of the 26th European Solid State Device Research Conference., 5437045, IEEE, Piscataway, NJ, pp. 329-332, 26th European Solid State Device Research Conference, ESSDERC 1996, Bologna, Italy, 9/09/96. <https://ieeexplore.ieee.org/document/5437045>

Design and characterisation of high-performance 0.13 μm NMOS Devices. / Schmitz, J.; Paulzen, G.M.; Gravesteijn, D.J. et al.
ESSDERC 1996: Proceedings of the 26th European Solid State Device Research Conference. ed. / Massimo Rudan; Giorgio Baccarani. Piscataway, NJ: IEEE, 1996. p. 329-332 5437045.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Design and characterisation of high-performance 0.13 μm NMOS Devices

AU - Schmitz, J.

AU - Paulzen, G.M.

AU - Gravesteijn, D.J.

AU - Montree, A.H.

AU - Woerlee, P.H.

N1 - Conference code: 26

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.

AB - We report on the design, manufacturing and performance of NMOS transistors optimised or an effective channel length of 0.13 μm. The influence of the gate oxide thickness and pocket implants to device performance was studied. Pocket implanted devices show a high drive current (530 μA/μm at 1.8 V) and low off-current, with good suppression of short channel effects and a lifetime of 10 years at 1.8 V.

UR - https://www.scopus.com/pages/publications/84920719431

M3 - Conference contribution

AN - SCOPUS:84920719431

SN - 9782863321966

SP - 329

EP - 332

BT - ESSDERC 1996

A2 - Rudan, Massimo

A2 - Baccarani, Giorgio

PB - IEEE

CY - Piscataway, NJ

T2 - 26th European Solid State Device Research Conference, ESSDERC 1996

Y2 - 9 September 1996 through 11 September 1996

ER -

Design and characterisation of high-performance 0.13 μm NMOS Devices

Abstract

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