Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems

F. M. De Paola; L. C.N. De Vreede; L. K. Nanver; N. Rinaldi; J. N. Burghartz

doi:10.1109/SMIC.2004.1398169

Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems

F. M. De Paola^*, L. C.N. De Vreede, L. K. Nanver, N. Rinaldi, J. N. Burghartz

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gb/s driver operation for a 13/15 GHz (f _T/f_MAX) transistor technology.

Original language	English
Title of host publication	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publication	Digest of Papers
Editors	J.D. Cressler, J. Papapolymerou
Pages	69-72
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2004.1398169
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Atlanta, United States Duration: 8 Sep 2004 → 10 Sep 2004

Conference

Conference	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Country	United States
City	Atlanta
Period	8/09/04 → 10/09/04

Keywords

Argon
Attenuation compensation
Bipolar transistor
HRS
Silicon
Traveling wave amplifier

Access to Document

10.1109/SMIC.2004.1398169

Link to publication in Scopus

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De Paola, F. M., De Vreede, L. C. N., Nanver, L. K., Rinaldi, N., & Burghartz, J. N. (2004). Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems. In J. D. Cressler, & J. Papapolymerou (Eds.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers (pp. 69-72) https://doi.org/10.1109/SMIC.2004.1398169

@inproceedings{e28cc3a860e3482ba959554dbb66080b,

title = "Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems",

abstract = "A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gb/s driver operation for a 13/15 GHz (f T/fMAX) transistor technology.",

keywords = "Argon, Attenuation compensation, Bipolar transistor, HRS, Silicon, Traveling wave amplifier",

author = "{De Paola}, {F. M.} and {De Vreede}, {L. C.N.} and Nanver, {L. K.} and N. Rinaldi and Burghartz, {J. N.}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/SMIC.2004.1398169",

language = "English",

isbn = "0780387031",

pages = "69--72",

editor = "J.D. Cressler and J. Papapolymerou",

booktitle = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",

note = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 08-09-2004 Through 10-09-2004",

}

De Paola, FM, De Vreede, LCN, Nanver, LK, Rinaldi, N & Burghartz, JN 2004, Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems. in JD Cressler & J Papapolymerou (eds), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. pp. 69-72, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Atlanta, United States, 8/09/04. https://doi.org/10.1109/SMIC.2004.1398169

Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems. / De Paola, F. M.; De Vreede, L. C.N.; Nanver, L. K.; Rinaldi, N.; Burghartz, J. N.

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. ed. / J.D. Cressler; J. Papapolymerou. 2004. p. 69-72.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Rinaldi, N.

AU - Burghartz, J. N.

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N2 - A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gb/s driver operation for a 13/15 GHz (f T/fMAX) transistor technology.

AB - A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gb/s driver operation for a 13/15 GHz (f T/fMAX) transistor technology.

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KW - Attenuation compensation

KW - Bipolar transistor

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De Paola FM, De Vreede LCN, Nanver LK, Rinaldi N, Burghartz JN. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems. In Cressler JD, Papapolymerou J, editors, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. 2004. p. 69-72 https://doi.org/10.1109/SMIC.2004.1398169