Abstract
A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gb/s driver operation for a 13/15 GHz (f T/fMAX) transistor technology.
Original language | English |
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Title of host publication | 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
Subtitle of host publication | Digest of Papers |
Editors | J.D. Cressler, J. Papapolymerou |
Pages | 69-72 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Dec 2004 |
Externally published | Yes |
Event | 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Atlanta, United States Duration: 8 Sep 2004 → 10 Sep 2004 |
Conference
Conference | 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
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Country | United States |
City | Atlanta |
Period | 8/09/04 → 10/09/04 |
Keywords
- Argon
- Attenuation compensation
- Bipolar transistor
- HRS
- Silicon
- Traveling wave amplifier