Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems

F. M. De Paola*, L. C.N. De Vreede, L. K. Nanver, N. Rinaldi, J. N. Burghartz

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gb/s driver operation for a 13/15 GHz (f T/fMAX) transistor technology.

Original languageEnglish
Title of host publication2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publicationDigest of Papers
EditorsJ.D. Cressler, J. Papapolymerou
Pages69-72
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2004
Externally publishedYes
Event2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Atlanta, United States
Duration: 8 Sep 200410 Sep 2004

Conference

Conference2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
CountryUnited States
CityAtlanta
Period8/09/0410/09/04

Keywords

  • Argon
  • Attenuation compensation
  • Bipolar transistor
  • HRS
  • Silicon
  • Traveling wave amplifier

Fingerprint Dive into the research topics of 'Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems'. Together they form a unique fingerprint.

Cite this