Design and characterization of integrated passive elements on high ohmic silicon̈

E. Valletta, J. Van Beek, A. Den Dekker, N. Pulsford, H. F.F. Jos, L. C.N. De Vreede, L. K. Nanver, J. N. Burghartz

Research output: Contribution to journalConference articleAcademicpeer-review

18 Citations (Scopus)

Abstract

The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.

Original languageEnglish
Pages (from-to)1235-1238
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
Publication statusPublished - 18 Aug 2003
Event2003 IEEE MTT-S International Microwave Symposium - Philadelphia, United States
Duration: 8 Jun 200313 Jun 2003

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Coplanar waveguides
waveguides
Silicon
silicon

Cite this

Valletta, E., Van Beek, J., Den Dekker, A., Pulsford, N., Jos, H. F. F., De Vreede, L. C. N., ... Burghartz, J. N. (2003). Design and characterization of integrated passive elements on high ohmic silicon̈. IEEE MTT-S International Microwave Symposium Digest, 2, 1235-1238. https://doi.org/10.1109/MWSYM.2003.1212592
Valletta, E. ; Van Beek, J. ; Den Dekker, A. ; Pulsford, N. ; Jos, H. F.F. ; De Vreede, L. C.N. ; Nanver, L. K. ; Burghartz, J. N. / Design and characterization of integrated passive elements on high ohmic silicon̈. In: IEEE MTT-S International Microwave Symposium Digest. 2003 ; Vol. 2. pp. 1235-1238.
@article{04017e188d514760a12d8e732e938839,
title = "Design and characterization of integrated passive elements on high ohmic silicon̈",
abstract = "The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.",
author = "E. Valletta and {Van Beek}, J. and {Den Dekker}, A. and N. Pulsford and Jos, {H. F.F.} and {De Vreede}, {L. C.N.} and Nanver, {L. K.} and Burghartz, {J. N.}",
year = "2003",
month = "8",
day = "18",
doi = "10.1109/MWSYM.2003.1212592",
language = "English",
volume = "2",
pages = "1235--1238",
journal = "IEEE MTT-S International Microwave Symposium Digest",
issn = "0149-645X",
publisher = "IEEE",

}

Valletta, E, Van Beek, J, Den Dekker, A, Pulsford, N, Jos, HFF, De Vreede, LCN, Nanver, LK & Burghartz, JN 2003, 'Design and characterization of integrated passive elements on high ohmic silicon̈' IEEE MTT-S International Microwave Symposium Digest, vol. 2, pp. 1235-1238. https://doi.org/10.1109/MWSYM.2003.1212592

Design and characterization of integrated passive elements on high ohmic silicon̈. / Valletta, E.; Van Beek, J.; Den Dekker, A.; Pulsford, N.; Jos, H. F.F.; De Vreede, L. C.N.; Nanver, L. K.; Burghartz, J. N.

In: IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 18.08.2003, p. 1235-1238.

Research output: Contribution to journalConference articleAcademicpeer-review

TY - JOUR

T1 - Design and characterization of integrated passive elements on high ohmic silicon̈

AU - Valletta, E.

AU - Van Beek, J.

AU - Den Dekker, A.

AU - Pulsford, N.

AU - Jos, H. F.F.

AU - De Vreede, L. C.N.

AU - Nanver, L. K.

AU - Burghartz, J. N.

PY - 2003/8/18

Y1 - 2003/8/18

N2 - The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.

AB - The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.

UR - http://www.scopus.com/inward/record.url?scp=0042092178&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2003.1212592

DO - 10.1109/MWSYM.2003.1212592

M3 - Conference article

VL - 2

SP - 1235

EP - 1238

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -