Design and characterization of integrated passive elements on high ohmic silicon̈

E. Valletta*, J. Van Beek, A. Den Dekker, N. Pulsford, H. F.F. Jos, L. C.N. De Vreede, L. K. Nanver, J. N. Burghartz

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

18 Citations (Scopus)

Abstract

The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.

Original languageEnglish
Pages (from-to)1235-1238
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
Publication statusPublished - 18 Aug 2003
Event2003 IEEE MTT-S International Microwave Symposium - Philadelphia, United States
Duration: 8 Jun 200313 Jun 2003

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  • Cite this

    Valletta, E., Van Beek, J., Den Dekker, A., Pulsford, N., Jos, H. F. F., De Vreede, L. C. N., ... Burghartz, J. N. (2003). Design and characterization of integrated passive elements on high ohmic silicon̈. IEEE MTT-S International Microwave Symposium Digest, 2, 1235-1238. https://doi.org/10.1109/MWSYM.2003.1212592