Design and characterization of integrated passive elements on high ohmic silicon̈

E. Valletta; J. Van Beek; A. Den Dekker; N. Pulsford; H. F.F. Jos; L. C.N. De Vreede; L. K. Nanver; J. N. Burghartz

doi:10.1109/MWSYM.2003.1212592

Design and characterization of integrated passive elements on high ohmic silicon̈

E. Valletta^*, J. Van Beek, A. Den Dekker, N. Pulsford, H. F.F. Jos, L. C.N. De Vreede, L. K. Nanver, J. N. Burghartz

^*Corresponding author for this work

Department of Geo-information Processing

Research output: Contribution to journal › Conference article › Academic › peer-review

18 Citations (Scopus)

Abstract

The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.

Original language	English
Pages (from-to)	1235-1238
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
DOIs	https://doi.org/10.1109/MWSYM.2003.1212592
Publication status	Published - 18 Aug 2003
Event	2003 IEEE MTT-S International Microwave Symposium - Philadelphia, United States Duration: 8 Jun 2003 → 13 Jun 2003

Access to Document

10.1109/MWSYM.2003.1212592

Cite this

@article{04017e188d514760a12d8e732e938839,

title = "Design and characterization of integrated passive elements on high ohmic silico{\"n}",

abstract = "The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.",

author = "E. Valletta and {Van Beek}, J. and {Den Dekker}, A. and N. Pulsford and Jos, {H. F.F.} and {De Vreede}, {L. C.N.} and Nanver, {L. K.} and Burghartz, {J. N.}",

year = "2003",

month = aug,

day = "18",

doi = "10.1109/MWSYM.2003.1212592",

language = "English",

volume = "2",

pages = "1235--1238",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "IEEE",

note = "2003 IEEE MTT-S International Microwave Symposium ; Conference date: 08-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Design and characterization of integrated passive elements on high ohmic silicon̈

AU - Valletta, E.

AU - Van Beek, J.

AU - Den Dekker, A.

AU - Pulsford, N.

AU - Jos, H. F.F.

AU - De Vreede, L. C.N.

AU - Nanver, L. K.

AU - Burghartz, J. N.

PY - 2003/8/18

Y1 - 2003/8/18

N2 - The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.

AB - The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.

UR - http://www.scopus.com/inward/record.url?scp=0042092178&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2003.1212592

DO - 10.1109/MWSYM.2003.1212592

M3 - Conference article

AN - SCOPUS:0042092178

SN - 0149-645X

VL - 2

SP - 1235

EP - 1238

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2003 IEEE MTT-S International Microwave Symposium

Y2 - 8 June 2003 through 13 June 2003

ER -

Design and characterization of integrated passive elements on high ohmic silicon̈

Abstract

Access to Document

Other files and links

Cite this