The design and characterization of integrated passive elements on high ohmic silicon was presented. The excellent results were obtained for the coplanar waveguides and Marchand baluns for Ka-band applications. It was shown that the losses for integrated passives were comparable with state-of-the-art GaAs implementations.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|Publication status||Published - 18 Aug 2003|
|Event||2003 IEEE MTT-S International Microwave Symposium - Philadelphia, United States|
Duration: 8 Jun 2003 → 13 Jun 2003