Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers

Jinfeng Mu, Mustafa Sefünç, Sonia Maria García Blanco

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the on-chip amplifier is proposed. The methodology shows high efficiency and tolerance in the adiabatic coupler design. The calculated losses of the adiabatic coupler are as low as 0.5 dB for 0.98 μm and 0.14 dB for 1.55 μm. The length of the taper is quantitatively optimized with an adiabatic transfer
Original languageEnglish
Title of host publication16th International Conference on Transparent Optical Networks (ICTON), 2014
Place of PublicationGraz, Austria
PublisherIEEE
Pages1-4
DOIs
Publication statusPublished - 6 Jul 2014
Event16th International Conference on Transparent Optical Networks, ICTON 2014 - Graz, Austria
Duration: 6 Jul 201410 Jul 2014
Conference number: 16

Publication series

Name
PublisherIEEE

Conference

Conference16th International Conference on Transparent Optical Networks, ICTON 2014
Abbreviated titleICTON
CountryAustria
CityGraz
Period6/07/1410/07/14

Keywords

  • METIS-306419
  • IR-94963

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    Mu, J., Sefünç, M., & García Blanco, S. M. (2014). Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers. In 16th International Conference on Transparent Optical Networks (ICTON), 2014 (pp. 1-4). Graz, Austria: IEEE. https://doi.org/10.1109/ICTON.2014.6876570