Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers

Jinfeng Mu; Mustafa Sefünç; Sonia Maria García Blanco

doi:10.1109/ICTON.2014.6876570

Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers

Jinfeng Mu, Mustafa Sefünç, Sonia Maria García Blanco

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

Abstract

The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the on-chip amplifier is proposed. The methodology shows high efficiency and tolerance in the adiabatic coupler design. The calculated losses of the adiabatic coupler are as low as 0.5 dB for 0.98 μm and 0.14 dB for 1.55 μm. The length of the taper is quantitatively optimized with an adiabatic transfer

Original language	English
Title of host publication	16th International Conference on Transparent Optical Networks (ICTON), 2014
Place of Publication	Graz, Austria
Publisher	IEEE
Pages	1-4
DOIs	https://doi.org/10.1109/ICTON.2014.6876570
Publication status	Published - 6 Jul 2014
Event	16th International Conference on Transparent Optical Networks, ICTON 2014 - Graz, Austria Duration: 6 Jul 2014 → 10 Jul 2014 Conference number: 16

Publication series

Name
Publisher	IEEE

Conference

Conference	16th International Conference on Transparent Optical Networks, ICTON 2014
Abbreviated title	ICTON
Country/Territory	Austria
City	Graz
Period	6/07/14 → 10/07/14

Keywords

METIS-306419
IR-94963

Access to Document

10.1109/ICTON.2014.6876570

Cite this

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title = "Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers",

abstract = "The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the on-chip amplifier is proposed. The methodology shows high efficiency and tolerance in the adiabatic coupler design. The calculated losses of the adiabatic coupler are as low as 0.5 dB for 0.98 μm and 0.14 dB for 1.55 μm. The length of the taper is quantitatively optimized with an adiabatic transfer",

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year = "2014",

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day = "6",

doi = "10.1109/ICTON.2014.6876570",

language = "English",

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booktitle = "16th International Conference on Transparent Optical Networks (ICTON), 2014",

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note = "16th International Conference on Transparent Optical Networks, ICTON 2014, ICTON ; Conference date: 06-07-2014 Through 10-07-2014",

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Mu, J, Sefünç, M & García Blanco, SM 2014, Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers. in 16th International Conference on Transparent Optical Networks (ICTON), 2014. IEEE, Graz, Austria, pp. 1-4, 16th International Conference on Transparent Optical Networks, ICTON 2014, Graz, Austria, 6/07/14. https://doi.org/10.1109/ICTON.2014.6876570

Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers. / Mu, Jinfeng; Sefünç, Mustafa; García Blanco, Sonia Maria.

16th International Conference on Transparent Optical Networks (ICTON), 2014. Graz, Austria : IEEE, 2014. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers

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AU - Sefünç, Mustafa

AU - García Blanco, Sonia Maria

N1 - Conference code: 16

PY - 2014/7/6

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N2 - The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the on-chip amplifier is proposed. The methodology shows high efficiency and tolerance in the adiabatic coupler design. The calculated losses of the adiabatic coupler are as low as 0.5 dB for 0.98 μm and 0.14 dB for 1.55 μm. The length of the taper is quantitatively optimized with an adiabatic transfer

AB - The integration of rare-earth doped double tungstate waveguide amplifiers onto passive technology platforms enables the on-chip amplification of very high bit rate signals. In this work, a methodology for the optimized design of vertical adiabatic couplers between a passive Si3N4 waveguide and the on-chip amplifier is proposed. The methodology shows high efficiency and tolerance in the adiabatic coupler design. The calculated losses of the adiabatic coupler are as low as 0.5 dB for 0.98 μm and 0.14 dB for 1.55 μm. The length of the taper is quantitatively optimized with an adiabatic transfer

KW - METIS-306419

KW - IR-94963

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DO - 10.1109/ICTON.2014.6876570

M3 - Conference contribution

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BT - 16th International Conference on Transparent Optical Networks (ICTON), 2014

PB - IEEE

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T2 - 16th International Conference on Transparent Optical Networks, ICTON 2014

Y2 - 6 July 2014 through 10 July 2014

ER -

Design and length optimization of an adiabatic coupler for on-chip vertical integration of rare-earth-doped double tungstate waveguide amplifiers

Abstract

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Keywords

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