Design concepts for semiconductor based ultra-linear varactor circuits (invited)

C. Huang; K. Buisman; L. K. Nanver; P. J. Zampardi; L. E. Larson; L. C N De Vreede

doi:10.1109/BIPOL.2010.5668027

Design concepts for semiconductor based ultra-linear varactor circuits (invited)

C. Huang^*, K. Buisman, L. K. Nanver, P. J. Zampardi, L. E. Larson, L. C N De Vreede

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

4 Downloads (Pure)

Abstract

For the implementation of RF tunable components, semiconductor based varactors provide advantages in terms of low control voltage, high capacitance density, low packaging costs, high reliability and technology compatibility. In this paper, an overview is given of the linearization approaches for semiconductor based ultra-linear varactors. Implementation issues regarding the optimum doping profiles are discussed. Design considerations for dedicated bias networks that provide optimum third-order intermodulation cancellation for the various varactor configurations are presented. To give an indication of the system-level responses for linear varactors, a varactor-based "true" time delay phase shifter is designed and the system-level linearity parameters, like adjacent channel power ratio (ACPR) and error vector magnitude (EVM), are evaluated for various application conditions.

Original language	English
Title of host publication	2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
Pages	204-211
Number of pages	8
DOIs	https://doi.org/10.1109/BIPOL.2010.5668027
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010 - Austin, United States Duration: 4 Oct 2010 → 6 Oct 2010

Conference

Conference	2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
Abbreviated title	BCTM 2010
Country/Territory	United States
City	Austin
Period	4/10/10 → 6/10/10

Keywords

Adaptive systems
Linear circuits
Tunable circuits and devices
Varactors

Access to Document

10.1109/BIPOL.2010.5668027

Cite this

@inproceedings{45e719d25d68470c851f21002a2b4762,

title = "Design concepts for semiconductor based ultra-linear varactor circuits (invited)",

abstract = "For the implementation of RF tunable components, semiconductor based varactors provide advantages in terms of low control voltage, high capacitance density, low packaging costs, high reliability and technology compatibility. In this paper, an overview is given of the linearization approaches for semiconductor based ultra-linear varactors. Implementation issues regarding the optimum doping profiles are discussed. Design considerations for dedicated bias networks that provide optimum third-order intermodulation cancellation for the various varactor configurations are presented. To give an indication of the system-level responses for linear varactors, a varactor-based {"}true{"} time delay phase shifter is designed and the system-level linearity parameters, like adjacent channel power ratio (ACPR) and error vector magnitude (EVM), are evaluated for various application conditions.",

keywords = "Adaptive systems, Linear circuits, Tunable circuits and devices, Varactors",

author = "C. Huang and K. Buisman and Nanver, {L. K.} and Zampardi, {P. J.} and Larson, {L. E.} and {De Vreede}, {L. C N}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/BIPOL.2010.5668027",

language = "English",

isbn = "9781424485789",

pages = "204--211",

booktitle = "2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010",

note = "2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010, BCTM 2010 ; Conference date: 04-10-2010 Through 06-10-2010",

}

Huang, C, Buisman, K, Nanver, LK, Zampardi, PJ, Larson, LE & De Vreede, LCN 2010, Design concepts for semiconductor based ultra-linear varactor circuits (invited). in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010., 5668027, pp. 204-211, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010, Austin, Texas, United States, 4/10/10. https://doi.org/10.1109/BIPOL.2010.5668027

Design concepts for semiconductor based ultra-linear varactor circuits (invited). / Huang, C.; Buisman, K.; Nanver, L. K.; Zampardi, P. J.; Larson, L. E.; De Vreede, L. C N.

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010. 2010. p. 204-211 5668027.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Design concepts for semiconductor based ultra-linear varactor circuits (invited)

AU - Huang, C.

AU - Buisman, K.

AU - Nanver, L. K.

AU - Zampardi, P. J.

AU - Larson, L. E.

AU - De Vreede, L. C N

PY - 2010/12/1

Y1 - 2010/12/1

N2 - For the implementation of RF tunable components, semiconductor based varactors provide advantages in terms of low control voltage, high capacitance density, low packaging costs, high reliability and technology compatibility. In this paper, an overview is given of the linearization approaches for semiconductor based ultra-linear varactors. Implementation issues regarding the optimum doping profiles are discussed. Design considerations for dedicated bias networks that provide optimum third-order intermodulation cancellation for the various varactor configurations are presented. To give an indication of the system-level responses for linear varactors, a varactor-based "true" time delay phase shifter is designed and the system-level linearity parameters, like adjacent channel power ratio (ACPR) and error vector magnitude (EVM), are evaluated for various application conditions.

AB - For the implementation of RF tunable components, semiconductor based varactors provide advantages in terms of low control voltage, high capacitance density, low packaging costs, high reliability and technology compatibility. In this paper, an overview is given of the linearization approaches for semiconductor based ultra-linear varactors. Implementation issues regarding the optimum doping profiles are discussed. Design considerations for dedicated bias networks that provide optimum third-order intermodulation cancellation for the various varactor configurations are presented. To give an indication of the system-level responses for linear varactors, a varactor-based "true" time delay phase shifter is designed and the system-level linearity parameters, like adjacent channel power ratio (ACPR) and error vector magnitude (EVM), are evaluated for various application conditions.

KW - Adaptive systems

KW - Linear circuits

KW - Tunable circuits and devices

KW - Varactors

UR - http://www.scopus.com/inward/record.url?scp=78651398641&partnerID=8YFLogxK

U2 - 10.1109/BIPOL.2010.5668027

DO - 10.1109/BIPOL.2010.5668027

M3 - Conference contribution

AN - SCOPUS:78651398641

SN - 9781424485789

SP - 204

EP - 211

BT - 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010

T2 - 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010

Y2 - 4 October 2010 through 6 October 2010

ER -

Design concepts for semiconductor based ultra-linear varactor circuits (invited)

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this