Design concepts for semiconductor based ultra-linear varactor circuits (invited)

C. Huang*, K. Buisman, L. K. Nanver, P. J. Zampardi, L. E. Larson, L. C N De Vreede

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)

Abstract

For the implementation of RF tunable components, semiconductor based varactors provide advantages in terms of low control voltage, high capacitance density, low packaging costs, high reliability and technology compatibility. In this paper, an overview is given of the linearization approaches for semiconductor based ultra-linear varactors. Implementation issues regarding the optimum doping profiles are discussed. Design considerations for dedicated bias networks that provide optimum third-order intermodulation cancellation for the various varactor configurations are presented. To give an indication of the system-level responses for linear varactors, a varactor-based "true" time delay phase shifter is designed and the system-level linearity parameters, like adjacent channel power ratio (ACPR) and error vector magnitude (EVM), are evaluated for various application conditions.

Original languageEnglish
Title of host publication2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
Pages204-211
Number of pages8
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010 - Austin, United States
Duration: 4 Oct 20106 Oct 2010

Conference

Conference2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
Abbreviated titleBCTM 2010
CountryUnited States
CityAustin
Period4/10/106/10/10

Keywords

  • Adaptive systems
  • Linear circuits
  • Tunable circuits and devices
  • Varactors

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