Design Considerations for Integrated High-Frequency p-Channel JFET's

Lis K. Nanver, Egbert J.G. Goudena

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

To achieve high-frequency performance of integrated p- channel JFET’s, the large substrate capacitance is decoupled by separating the top gate from the bottom gate. Further optimization of the JFET design, with respect to frequency response, is studied here both theoretically and experimentally using devices produced in a double-implantation BIFET process for analog integrated circuits. Results show that attentuation of the hole mobility due to high doping level effects make it favorable to design with wide lightly doped channels. To avoid undesirable currents from the source to the drain or from the top to the bottom gate, the channel must be uniform. This and the requirements for high-frequency performance put additional demands on the technology. Use of the separated-gate JFET in circuit designs is complicated by the presence of a large bulk effect and the top-gate to bottom-gate reachthrough diode.

Original languageEnglish
Pages (from-to)1924-1934
Number of pages11
JournalIEEE transactions on electron devices
Volume35
Issue number11
DOIs
Publication statusPublished - Nov 1988
Externally publishedYes

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Junction gate field effect transistors
JFET
Hole mobility
Frequency response
Diodes
Capacitance
Doping (additives)
analog circuits
Networks (circuits)
hole mobility
Substrates
frequency response
integrated circuits
implantation
capacitance
diodes
requirements
optimization

Cite this

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abstract = "To achieve high-frequency performance of integrated p- channel JFET’s, the large substrate capacitance is decoupled by separating the top gate from the bottom gate. Further optimization of the JFET design, with respect to frequency response, is studied here both theoretically and experimentally using devices produced in a double-implantation BIFET process for analog integrated circuits. Results show that attentuation of the hole mobility due to high doping level effects make it favorable to design with wide lightly doped channels. To avoid undesirable currents from the source to the drain or from the top to the bottom gate, the channel must be uniform. This and the requirements for high-frequency performance put additional demands on the technology. Use of the separated-gate JFET in circuit designs is complicated by the presence of a large bulk effect and the top-gate to bottom-gate reachthrough diode.",
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Design Considerations for Integrated High-Frequency p-Channel JFET's. / Nanver, Lis K.; Goudena, Egbert J.G.

In: IEEE transactions on electron devices, Vol. 35, No. 11, 11.1988, p. 1924-1934.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

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AU - Nanver, Lis K.

AU - Goudena, Egbert J.G.

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AB - To achieve high-frequency performance of integrated p- channel JFET’s, the large substrate capacitance is decoupled by separating the top gate from the bottom gate. Further optimization of the JFET design, with respect to frequency response, is studied here both theoretically and experimentally using devices produced in a double-implantation BIFET process for analog integrated circuits. Results show that attentuation of the hole mobility due to high doping level effects make it favorable to design with wide lightly doped channels. To avoid undesirable currents from the source to the drain or from the top to the bottom gate, the channel must be uniform. This and the requirements for high-frequency performance put additional demands on the technology. Use of the separated-gate JFET in circuit designs is complicated by the presence of a large bulk effect and the top-gate to bottom-gate reachthrough diode.

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