Abstract
Erbium-doped Y2O3 integrated optical amplifiers are designed for low-threshold operation and 3 dB amplification. The most important design parameter for minimal threshold, the erbium concentration, is found to have an optimum value of 0.35 at% for a given waveguide structure with 1.0 dB cm-1 background loss. The corresponding threshold power is 7 mW. The pump power to obtain 3 dB gain is found to be 22 mW for an amplifier with an optimum erbium concentration of 0.6 at% and 2.8 cm length. At 30 mW pump power the maximum gain is shown to be 5 dB.
Designing is done using a comprehensive numerical model of an erbium-doped integrated optical amplifier. In the model two-dimensional intensity-dependent overlap integrals are used, which allow arbitrary erbium dopant profiles and waveguide crosssections. Concentration-dependent effects such as quenching and upconversion are also included in the model.
Input parameters for the model are determined from measurements on an unoptimized Er: Y2O3 optical waveguide amplifier. Amplification simulations and gain measurements of the unoptimized waveguides are found to be in close agreement, providing a sound basis for the design calculations.
Original language | English |
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Pages (from-to) | S285-S299 |
Journal | Optical and quantum electronics |
Volume | 26 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1994 |