Design of 200 GHz SiGe HBT's

L. C.M. Van den Oever; L. K. Nanver; J. W. Slotboom

doi:10.1109/BIPOL.2001.957861

Design of 200 GHz SiGe HBT's

L. C.M. Van den Oever, L. K. Nanver, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.

Original language	English
Title of host publication	Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
Pages	78-81
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2001.957861
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, United States Duration: 2 Oct 2001 → 2 Oct 2001

Conference

Conference	2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
Country/Territory	United States
City	Minneapolis
Period	2/10/01 → 2/10/01

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10.1109/BIPOL.2001.957861

Cite this

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title = "Design of 200 GHz SiGe HBT's",

abstract = "The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.",

author = "{Van den Oever}, {L. C.M.} and Nanver, {L. K.} and Slotboom, {J. W.}",

year = "2002",

month = jan,

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doi = "10.1109/BIPOL.2001.957861",

language = "English",

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note = "2001 BIPOLAR/BiCMOS Circuits and Technology Meeting ; Conference date: 02-10-2001 Through 02-10-2001",

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AU - Van den Oever, L. C.M.

AU - Nanver, L. K.

AU - Slotboom, J. W.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.

AB - The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.

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U2 - 10.1109/BIPOL.2001.957861

DO - 10.1109/BIPOL.2001.957861

M3 - Conference contribution

AN - SCOPUS:0035167219

SN - 0-7803-7019-8

SP - 78

EP - 81

BT - Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting

T2 - 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting

Y2 - 2 October 2001 through 2 October 2001

ER -

Design of 200 GHz SiGe HBT's

Abstract

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