Design of 200 GHz SiGe HBT's

L. C.M. Van den Oever, L. K. Nanver, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.

Original languageEnglish
Title of host publicationProceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
Pages78-81
Number of pages4
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, United States
Duration: 2 Oct 20012 Oct 2001

Conference

Conference2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
CountryUnited States
CityMinneapolis
Period2/10/012/10/01

Fingerprint

Heterojunction bipolar transistors
Electric breakdown
Heterojunctions
Doping (additives)

Cite this

Van den Oever, L. C. M., Nanver, L. K., & Slotboom, J. W. (2002). Design of 200 GHz SiGe HBT's. In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (pp. 78-81) https://doi.org/10.1109/BIPOL.2001.957861
Van den Oever, L. C.M. ; Nanver, L. K. ; Slotboom, J. W. / Design of 200 GHz SiGe HBT's. Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting. 2002. pp. 78-81
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Van den Oever, LCM, Nanver, LK & Slotboom, JW 2002, Design of 200 GHz SiGe HBT's. in Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting. pp. 78-81, 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting, Minneapolis, United States, 2/10/01. https://doi.org/10.1109/BIPOL.2001.957861

Design of 200 GHz SiGe HBT's. / Van den Oever, L. C.M.; Nanver, L. K.; Slotboom, J. W.

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting. 2002. p. 78-81.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AB - The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.

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Van den Oever LCM, Nanver LK, Slotboom JW. Design of 200 GHz SiGe HBT's. In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting. 2002. p. 78-81 https://doi.org/10.1109/BIPOL.2001.957861