The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.
|Title of host publication||Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting|
|Number of pages||4|
|Publication status||Published - 1 Jan 2002|
|Event||2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, United States|
Duration: 2 Oct 2001 → 2 Oct 2001
|Conference||2001 BIPOLAR/BiCMOS Circuits and Technology Meeting|
|Period||2/10/01 → 2/10/01|