Abstract
The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting |
| Pages | 78-81 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 1 Jan 2002 |
| Externally published | Yes |
| Event | 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, United States Duration: 2 Oct 2001 → 2 Oct 2001 |
Conference
| Conference | 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting |
|---|---|
| Country | United States |
| City | Minneapolis |
| Period | 2/10/01 → 2/10/01 |
Fingerprint
Cite this
}
Design of 200 GHz SiGe HBT's. / Van den Oever, L. C.M.; Nanver, L. K.; Slotboom, J. W.
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting. 2002. p. 78-81.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Design of 200 GHz SiGe HBT's
AU - Van den Oever, L. C.M.
AU - Nanver, L. K.
AU - Slotboom, J. W.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.
AB - The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.
UR - http://www.scopus.com/inward/record.url?scp=0035167219&partnerID=8YFLogxK
U2 - 10.1109/BIPOL.2001.957861
DO - 10.1109/BIPOL.2001.957861
M3 - Conference contribution
SN - 0-7803-7019-8
SP - 78
EP - 81
BT - Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
ER -