Design of 200 GHz SiGe HBT's

L. C.M. Van den Oever, L. K. Nanver, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.

Original languageEnglish
Title of host publicationProceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
Pages78-81
Number of pages4
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
Event2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, United States
Duration: 2 Oct 20012 Oct 2001

Conference

Conference2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
CountryUnited States
CityMinneapolis
Period2/10/012/10/01

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  • Cite this

    Van den Oever, L. C. M., Nanver, L. K., & Slotboom, J. W. (2002). Design of 200 GHz SiGe HBT's. In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (pp. 78-81) https://doi.org/10.1109/BIPOL.2001.957861