Design of 200 GHz SiGe HBT's

L. C.M. Van den Oever; L. K. Nanver; J. W. Slotboom

doi:10.1109/BIPOL.2001.957861

Design of 200 GHz SiGe HBT's

L. C.M. Van den Oever, L. K. Nanver, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.

Original language	English
Title of host publication	Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
Pages	78-81
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2001.957861
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, United States Duration: 2 Oct 2001 → 2 Oct 2001

Conference

Conference	2001 BIPOLAR/BiCMOS Circuits and Technology Meeting
Country	United States
City	Minneapolis
Period	2/10/01 → 2/10/01

Access to Document

10.1109/BIPOL.2001.957861

Link to publication in Scopus

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Cite this

Van den Oever, L. C. M., Nanver, L. K., & Slotboom, J. W. (2002). Design of 200 GHz SiGe HBT's. In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (pp. 78-81) https://doi.org/10.1109/BIPOL.2001.957861

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