Abstract
The high-frequency capability of SiGe heterojunction bipolar transistors (HBT) was analyzed using 1-dimensional device simulations. The power of the heterojunction to increase the collector current was also studied. The results showed that the common-emitter breakdown voltage at high collector doping levels is higher than expected.
Original language | English |
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Title of host publication | Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting |
Pages | 78-81 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Jan 2002 |
Externally published | Yes |
Event | 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, United States Duration: 2 Oct 2001 → 2 Oct 2001 |
Conference
Conference | 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting |
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Country/Territory | United States |
City | Minneapolis |
Period | 2/10/01 → 2/10/01 |