Design optimization of field-plate assisted RESURF devices

B.K. Boksteen, A. Ferrara, A. Heringa, P.G. Steeneken, G.E.J. Koops, Raymond Josephus Engelbart Hueting

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    9 Citations (Scopus)
    124 Downloads (Pure)

    Abstract

    A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices.
    Original languageUndefined
    Title of host publication25th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2013
    Place of PublicationUSA
    PublisherIEEE Circuits & Systems Society
    Pages237-240
    Number of pages4
    ISBN (Print)978-1-4673-5134-8
    DOIs
    Publication statusPublished - 26 May 2013
    Event25th International Symposium on Power Semiconductor Devices & ICs, 2013 - Ishikawa Ongakudo, Kanazawa, Japan
    Duration: 26 May 201330 May 2013
    Conference number: 25

    Publication series

    Name
    PublisherIEEE
    ISSN (Print)1943-653X

    Conference

    Conference25th International Symposium on Power Semiconductor Devices & ICs, 2013
    Abbreviated titleISPSD 2013
    CountryJapan
    CityKanazawa
    Period26/05/1330/05/13

    Keywords

    • EWI-24483
    • METIS-297988
    • IR-87592
    • DielectricsDopingElectric breakdownJunctionsMathematical modelOptimizationSemiconductor process modeling

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