Design optimization of field-plate assisted RESURF devices

B.K. Boksteen; A. Ferrara; A. Heringa; P.G. Steeneken; G.E.J. Koops; Raymond Josephus Engelbart Hueting

doi:10.1109/ISPSD.2013.6694460

Design optimization of field-plate assisted RESURF devices

B.K. Boksteen, A. Ferrara, A. Heringa, P.G. Steeneken, G.E.J. Koops, Raymond Josephus Engelbart Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

263 Downloads (Pure)

Abstract

A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices.

Original language	Undefined
Title of host publication	25th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2013
Place of Publication	USA
Publisher	IEEE
Pages	237-240
Number of pages	4
ISBN (Print)	978-1-4673-5134-8
DOIs	https://doi.org/10.1109/ISPSD.2013.6694460
Publication status	Published - 26 May 2013
Event	25th International Symposium on Power Semiconductor Devices & ICs, 2013 - Ishikawa Ongakudo, Kanazawa, Japan Duration: 26 May 2013 → 30 May 2013 Conference number: 25

Publication series

Name
Publisher	IEEE
ISSN (Print)	1943-653X

Conference

Conference	25th International Symposium on Power Semiconductor Devices & ICs, 2013
Abbreviated title	ISPSD 2013
Country/Territory	Japan
City	Kanazawa
Period	26/05/13 → 30/05/13

Keywords

EWI-24483
METIS-297988
IR-87592
DielectricsDopingElectric breakdownJunctionsMathematical modelOptimizationSemiconductor process modeling

Access to Document

10.1109/ISPSD.2013.6694460

Boksteen_Design_FP-RESURF_ISPSD2013

http://eprints.eemcs.utwente.nl/secure2/24483/01/boksteen_ISPSD_2013.pdf

Cite this

@inproceedings{00e64a30371c4a12aba8fc0c46f1a520,

title = "Design optimization of field-plate assisted RESURF devices",

abstract = "A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices.",

keywords = "EWI-24483, METIS-297988, IR-87592, DielectricsDopingElectric breakdownJunctionsMathematical modelOptimizationSemiconductor process modeling",

author = "B.K. Boksteen and A. Ferrara and A. Heringa and P.G. Steeneken and G.E.J. Koops and Hueting, {Raymond Josephus Engelbart}",

year = "2013",

month = may,

day = "26",

doi = "10.1109/ISPSD.2013.6694460",

language = "Undefined",

isbn = "978-1-4673-5134-8",

publisher = "IEEE",

pages = "237--240",

booktitle = "25th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2013",

address = "United States",

note = "25th International Symposium on Power Semiconductor Devices & ICs, 2013 ; Conference date: 26-05-2013 Through 30-05-2013",

}

Boksteen, BK, Ferrara, A, Heringa, A, Steeneken, PG, Koops, GEJ & Hueting, RJE 2013, Design optimization of field-plate assisted RESURF devices. in 25th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2013. IEEE, USA, pp. 237-240, 25th International Symposium on Power Semiconductor Devices & ICs, 2013, Kanazawa, Japan, 26/05/13. https://doi.org/10.1109/ISPSD.2013.6694460

TY - GEN

T1 - Design optimization of field-plate assisted RESURF devices

AU - Boksteen, B.K.

AU - Ferrara, A.

AU - Heringa, A.

AU - Steeneken, P.G.

AU - Koops, G.E.J.

AU - Hueting, Raymond Josephus Engelbart

N1 - Conference code: 25

PY - 2013/5/26

Y1 - 2013/5/26

N2 - A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices.

AB - A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices.

KW - EWI-24483

KW - METIS-297988

KW - IR-87592

KW - DielectricsDopingElectric breakdownJunctionsMathematical modelOptimizationSemiconductor process modeling

U2 - 10.1109/ISPSD.2013.6694460

DO - 10.1109/ISPSD.2013.6694460

M3 - Conference contribution

SN - 978-1-4673-5134-8

SP - 237

EP - 240

BT - 25th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2013

PB - IEEE

CY - USA

T2 - 25th International Symposium on Power Semiconductor Devices & ICs, 2013

Y2 - 26 May 2013 through 30 May 2013

ER -