TY - JOUR
T1 - Detection of heavy metal ions by ISFETs in a flow injection analysis cell
AU - Cobben, P.L.H.M.
AU - Egberink, R.J.M.
AU - Bomer, J.
AU - Haak, J.R.
AU - Bergveld, P.
AU - Reinhoudt, D.N.
PY - 1992
Y1 - 1992
N2 - An ion-selective field-effect transistor (ISFET) is chemically modified with a photopolymerizable and cyanopropyl modified polysiloxane containing N,N,N',N'-tetrabutyl-3,6-dioxaoctane-dithioamide as Cd2+ ionophore. This CHEMFET has a Nerstian response (30 mV/decade) to a change of cadmium activity in aqueous solutions. Selectivity coefficients of the CHEMFET towards potassium, calcium, copper, and lead are given. Preliminary results of the CHEMFET in a flow injection analysis cell without wire bonding and polymeric encapsulation are presented.
AB - An ion-selective field-effect transistor (ISFET) is chemically modified with a photopolymerizable and cyanopropyl modified polysiloxane containing N,N,N',N'-tetrabutyl-3,6-dioxaoctane-dithioamide as Cd2+ ionophore. This CHEMFET has a Nerstian response (30 mV/decade) to a change of cadmium activity in aqueous solutions. Selectivity coefficients of the CHEMFET towards potassium, calcium, copper, and lead are given. Preliminary results of the CHEMFET in a flow injection analysis cell without wire bonding and polymeric encapsulation are presented.
U2 - 10.1016/0925-4005(92)80075-9
DO - 10.1016/0925-4005(92)80075-9
M3 - Article
SN - 0925-4005
VL - 6
SP - 304
EP - 307
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
IS - 1-3
ER -