Determination of 2D implanted ion distributions using inverse radon transform methods

Eddie van Schie, Jan Middelhoek, Peer C. Zalm

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    Abstract

    Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.
    Original languageEnglish
    Pages (from-to)109-121
    JournalNuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms
    Volume42
    Issue number1
    DOIs
    Publication statusPublished - 1989

    Fingerprint

    ion distribution
    Radon
    radon
    implantation
    Analog to digital conversion
    Ions
    Ion implantation
    Boron
    Silicon
    profiles
    boron
    simulation
    Experiments
    silicon
    Monte Carlo simulation

    Cite this

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    title = "Determination of 2D implanted ion distributions using inverse radon transform methods",
    abstract = "Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.",
    author = "{van Schie}, Eddie and Jan Middelhoek and Zalm, {Peer C.}",
    year = "1989",
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    Determination of 2D implanted ion distributions using inverse radon transform methods. / van Schie, Eddie; Middelhoek, Jan; Zalm, Peer C.

    In: Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms, Vol. 42, No. 1, 1989, p. 109-121.

    Research output: Contribution to journalArticleAcademic

    TY - JOUR

    T1 - Determination of 2D implanted ion distributions using inverse radon transform methods

    AU - van Schie, Eddie

    AU - Middelhoek, Jan

    AU - Zalm, Peer C.

    PY - 1989

    Y1 - 1989

    N2 - Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.

    AB - Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.

    U2 - 10.1016/0168-583X(89)90015-3

    DO - 10.1016/0168-583X(89)90015-3

    M3 - Article

    VL - 42

    SP - 109

    EP - 121

    JO - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

    JF - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

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    IS - 1

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