Determination of 2D implanted ion distributions using inverse radon transform methods

Eddie van Schie; Jan Middelhoek; Peer C. Zalm

doi:10.1016/0168-583X(89)90015-3

Determination of 2D implanted ion distributions using inverse radon transform methods

Eddie van Schie, Jan Middelhoek, Peer C. Zalm

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Abstract

Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.

Original language	English
Pages (from-to)	109-121
Journal	Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms
Volume	42
Issue number	1
DOIs	https://doi.org/10.1016/0168-583X(89)90015-3
Publication status	Published - 1989

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title = "Determination of 2D implanted ion distributions using inverse radon transform methods",

abstract = "Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.",

author = "{van Schie}, Eddie and Jan Middelhoek and Zalm, {Peer C.}",

year = "1989",

doi = "10.1016/0168-583X(89)90015-3",

language = "English",

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pages = "109--121",

journal = "Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms",

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T1 - Determination of 2D implanted ion distributions using inverse radon transform methods

AU - van Schie, Eddie

AU - Middelhoek, Jan

AU - Zalm, Peer C.

PY - 1989

Y1 - 1989

N2 - Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.

AB - Two methods are presented for the experimental determination of 2D implanted ion distribution resulting from implantations with a line source into amorphous targets. It is shown that the relation between the 2D distribution and the depth profiles resulting from tilted angle implantations is described by the Radon transformation. The inverse transformation has been applied to accurately measured depth profiles. The first method uses a digitization of the 2D distribution and the second method uses a parameterized function for the 2D distribution. The methods are tested for a 400 keV boron implantation in an amorphous layer of silicon. The experimental obtained 2D distributions are compared with a TRIM Monte Carlo simulation. A good agreement between experiment and simulation is observed.

U2 - 10.1016/0168-583X(89)90015-3

DO - 10.1016/0168-583X(89)90015-3

M3 - Article

SN - 0168-583X

VL - 42

SP - 109

EP - 121

JO - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

JF - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

IS - 1

ER -

Determination of 2D implanted ion distributions using inverse radon transform methods

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