Determination of Ge(001) step free energies

Henricus J.W. Zandvliet

doi:10.1103/PhysRevB.61.9972

Determination of Ge(001) step free energies

Henricus J.W. Zandvliet

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Scanning tunneling microscopy images of vicinal Ge(001) have been analyzed to determine the distribution of kinks. From this distribution, kink formation energies and step-free energies of the single-layer steps on Ge(001) have been extracted. Using the experimentally determined step free energies, it is predicted that Ge(001) thermally roughens prior to melting. This roughening transition, which is predicted to occur at 900±100 K, sheds light on the interpretation of the high-temperature phase transition of Ge(001).

Original language	Undefined
Pages (from-to)	9972-9974
Number of pages	3
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	61
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.61.9972
Publication status	Published - 2000

Keywords

IR-73142
METIS-128676

Access to Document

10.1103/PhysRevB.61.9972

Cite this

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title = "Determination of Ge(001) step free energies",

abstract = "Scanning tunneling microscopy images of vicinal Ge(001) have been analyzed to determine the distribution of kinks. From this distribution, kink formation energies and step-free energies of the single-layer steps on Ge(001) have been extracted. Using the experimentally determined step free energies, it is predicted that Ge(001) thermally roughens prior to melting. This roughening transition, which is predicted to occur at 900±100 K, sheds light on the interpretation of the high-temperature phase transition of Ge(001).",

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AU - Zandvliet, Henricus J.W.

PY - 2000

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N2 - Scanning tunneling microscopy images of vicinal Ge(001) have been analyzed to determine the distribution of kinks. From this distribution, kink formation energies and step-free energies of the single-layer steps on Ge(001) have been extracted. Using the experimentally determined step free energies, it is predicted that Ge(001) thermally roughens prior to melting. This roughening transition, which is predicted to occur at 900±100 K, sheds light on the interpretation of the high-temperature phase transition of Ge(001).

AB - Scanning tunneling microscopy images of vicinal Ge(001) have been analyzed to determine the distribution of kinks. From this distribution, kink formation energies and step-free energies of the single-layer steps on Ge(001) have been extracted. Using the experimentally determined step free energies, it is predicted that Ge(001) thermally roughens prior to melting. This roughening transition, which is predicted to occur at 900±100 K, sheds light on the interpretation of the high-temperature phase transition of Ge(001).

KW - IR-73142

KW - METIS-128676

U2 - 10.1103/PhysRevB.61.9972

DO - 10.1103/PhysRevB.61.9972

M3 - Article

SN - 0163-1829

VL - 61

SP - 9972

EP - 9974

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 15

ER -