Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

R. Coloma Ribera*, R.W.E. van de Kruijs, A.E. Yakshin, F. Bijkerk

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)
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In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.
Original languageEnglish
Article number055303
Number of pages5
JournalJournal of Applied Physics
Issue number5
Early online date6 Aug 2015
Publication statusPublished - 7 Aug 2015


  • METIS-311081
  • IR-96663
  • Microfabrication
  • Polycrystalline material
  • Thin films
  • Oxides
  • Transition metals
  • Chemical elements
  • Activation energies
  • Diffusion rate
  • Pre-exponential factor
  • X-ray
  • reflectivity
  • 2023 OA procedure


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