Determination of surface stress anisotropy from domain wall fluctuations

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Abstract

The thermally induced meandering of domain walls between (2×1) and c(4×2) regions on Ge(001) is analyzed with a scanning tunneling microscope in order to extract the anisotropy of the surface stress tensor. On small length scales the domain walls exhibit random walker behavior, whereas on larger length scales (>100 Å) due to domain-wall repulsion originating from the anisotropy in the surface stress tensor a deviation from this one-dimensional random-walk behavior is observed. We have determined a value of 0.13±0.04eV/(1×1) cell for the stress anisotropy.
Original languageUndefined
Pages (from-to)7289-7292
Number of pages4
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume1999
Issue number59
DOIs
Publication statusPublished - 1999

Keywords

  • METIS-128682
  • IR-73146

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