The thermally induced meandering of domain walls between (2×1) and c(4×2) regions on Ge(001) is analyzed with a scanning tunneling microscope in order to extract the anisotropy of the surface stress tensor. On small length scales the domain walls exhibit random walker behavior, whereas on larger length scales (>100 Å) due to domain-wall repulsion originating from the anisotropy in the surface stress tensor a deviation from this one-dimensional random-walk behavior is observed. We have determined a value of 0.13±0.04eV/(1×1) cell for the stress anisotropy.
|Number of pages||4|
|Journal||Physical Review B (Condensed Matter and Materials Physics)|
|Publication status||Published - 1999|