Determination of surface stress anisotropy from domain wall fluctuations

Henricus J.W. Zandvliet; Bene Poelsema

doi:10.1103/PhysRevB.59.7289

Determination of surface stress anisotropy from domain wall fluctuations

Henricus J.W. Zandvliet, Bene Poelsema

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Abstract

The thermally induced meandering of domain walls between (2×1) and c(4×2) regions on Ge(001) is analyzed with a scanning tunneling microscope in order to extract the anisotropy of the surface stress tensor. On small length scales the domain walls exhibit random walker behavior, whereas on larger length scales (>100 Å) due to domain-wall repulsion originating from the anisotropy in the surface stress tensor a deviation from this one-dimensional random-walk behavior is observed. We have determined a value of 0.13±0.04eV/(1×1) cell for the stress anisotropy.

Original language	Undefined
Pages (from-to)	7289-7292
Number of pages	4
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	1999
Issue number	59
DOIs	https://doi.org/10.1103/PhysRevB.59.7289
Publication status	Published - 1999

Keywords

METIS-128682
IR-73146

Access to Document

10.1103/PhysRevB.59.7289

determination_of_surface

Cite this

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title = "Determination of surface stress anisotropy from domain wall fluctuations",

abstract = "The thermally induced meandering of domain walls between (2×1) and c(4×2) regions on Ge(001) is analyzed with a scanning tunneling microscope in order to extract the anisotropy of the surface stress tensor. On small length scales the domain walls exhibit random walker behavior, whereas on larger length scales (>100 {\AA}) due to domain-wall repulsion originating from the anisotropy in the surface stress tensor a deviation from this one-dimensional random-walk behavior is observed. We have determined a value of 0.13±0.04eV/(1×1) cell for the stress anisotropy.",

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T1 - Determination of surface stress anisotropy from domain wall fluctuations

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

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N2 - The thermally induced meandering of domain walls between (2×1) and c(4×2) regions on Ge(001) is analyzed with a scanning tunneling microscope in order to extract the anisotropy of the surface stress tensor. On small length scales the domain walls exhibit random walker behavior, whereas on larger length scales (>100 Å) due to domain-wall repulsion originating from the anisotropy in the surface stress tensor a deviation from this one-dimensional random-walk behavior is observed. We have determined a value of 0.13±0.04eV/(1×1) cell for the stress anisotropy.

AB - The thermally induced meandering of domain walls between (2×1) and c(4×2) regions on Ge(001) is analyzed with a scanning tunneling microscope in order to extract the anisotropy of the surface stress tensor. On small length scales the domain walls exhibit random walker behavior, whereas on larger length scales (>100 Å) due to domain-wall repulsion originating from the anisotropy in the surface stress tensor a deviation from this one-dimensional random-walk behavior is observed. We have determined a value of 0.13±0.04eV/(1×1) cell for the stress anisotropy.

KW - METIS-128682

KW - IR-73146

U2 - 10.1103/PhysRevB.59.7289

DO - 10.1103/PhysRevB.59.7289

M3 - Article

SN - 0163-1829

VL - 1999

SP - 7289

EP - 7292

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

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ER -