Deuterium in the gate dielectric of CMOS devices

Albert Jan Hof

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    20 Downloads (Pure)

    Abstract

    Most of the electronic integrated circuits used today are Complementary MOS (CMOS) circuits, which consist mainly of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). In the last forty years there has been a tremendous reduction of the MOSFET dimensions. This reduction will continue, enabling even faster and more complex integrated circuits. But, there are a number of hurdles on the road. One of these hurdles is the thickness reduction of an essential electrically isolating layer inside the MOSFET, the so-called gate dielectric. This gate dielectric is becoming so thin, it starts to leak electrical current under operating conditions. This increases the power consumption and can lead to a non-functional transistor. Reliability is also of concern, because the gate dielectric deteriorates under device operation, leading to even larger leakage currents.
    Original languageEnglish
    Supervisors/Advisors
    • Schmitz, Jurriaan , Supervisor
    • Kovalgin, Alexey Y., Co-Supervisor
    Thesis sponsors
    Award date29 Oct 2004
    Place of PublicationEnschede
    Publisher
    Print ISBNs90-365-2093-2
    Publication statusPublished - 29 Oct 2004

    Fingerprint

    MOS devices
    Gate dielectrics
    MOSFET devices
    Deuterium
    Integrated circuits
    Leakage currents
    Transistors
    Electric power utilization
    Networks (circuits)

    Keywords

    • IR-67533
    • EWI-15737

    Cite this

    Hof, A. J. (2004). Deuterium in the gate dielectric of CMOS devices. Enschede: Twente University Press (TUP).
    Hof, Albert Jan. / Deuterium in the gate dielectric of CMOS devices. Enschede : Twente University Press (TUP), 2004. 97 p.
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    Deuterium in the gate dielectric of CMOS devices. / Hof, Albert Jan.

    Enschede : Twente University Press (TUP), 2004. 97 p.

    Research output: ThesisPhD Thesis - Research UT, graduation UT

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    T1 - Deuterium in the gate dielectric of CMOS devices

    AU - Hof, Albert Jan

    PY - 2004/10/29

    Y1 - 2004/10/29

    N2 - Most of the electronic integrated circuits used today are Complementary MOS (CMOS) circuits, which consist mainly of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). In the last forty years there has been a tremendous reduction of the MOSFET dimensions. This reduction will continue, enabling even faster and more complex integrated circuits. But, there are a number of hurdles on the road. One of these hurdles is the thickness reduction of an essential electrically isolating layer inside the MOSFET, the so-called gate dielectric. This gate dielectric is becoming so thin, it starts to leak electrical current under operating conditions. This increases the power consumption and can lead to a non-functional transistor. Reliability is also of concern, because the gate dielectric deteriorates under device operation, leading to even larger leakage currents.

    AB - Most of the electronic integrated circuits used today are Complementary MOS (CMOS) circuits, which consist mainly of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). In the last forty years there has been a tremendous reduction of the MOSFET dimensions. This reduction will continue, enabling even faster and more complex integrated circuits. But, there are a number of hurdles on the road. One of these hurdles is the thickness reduction of an essential electrically isolating layer inside the MOSFET, the so-called gate dielectric. This gate dielectric is becoming so thin, it starts to leak electrical current under operating conditions. This increases the power consumption and can lead to a non-functional transistor. Reliability is also of concern, because the gate dielectric deteriorates under device operation, leading to even larger leakage currents.

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    KW - EWI-15737

    M3 - PhD Thesis - Research UT, graduation UT

    SN - 90-365-2093-2

    PB - Twente University Press (TUP)

    CY - Enschede

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    Hof AJ. Deuterium in the gate dielectric of CMOS devices. Enschede: Twente University Press (TUP), 2004. 97 p.