Development of an electret microphone in silicon

A.J. Sprenkels, R.A. Groothengel, A.J. Verloop, P. Bergveld

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    Abstract

    We describe a subminiature electret microphone, which has been realized in silicon using wafer processing techniques. The microphone consists of a rigid backplate fabricated in silicon and a 2.5 μm thick metallized Mylar foil (PETP) acting as the diaphragm. Between the diaphragm and the backplate a 20 μm thick air cavity and a 1.1 μm thick charged SiO2 layer are present. The SiO2 layer is used as the electret and generates an electric field in the air gap. The electret has been changed to 300 V using a corona-charging set-up. The time constant of the charge decay amounts to more than 100 years at ambient laboratory conditions. The microphone cartridge, which measures 3 × 3 × 0.3 mm, shows an open-circuit sensitivity of about 2.5 mV/μbar at 1 kHz.
    Original languageEnglish
    Pages (from-to)509-512
    JournalSensors and actuators
    Volume17
    Issue number3-4
    DOIs
    Publication statusPublished - 1989

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    Sprenkels, A. J., Groothengel, R. A., Verloop, A. J., & Bergveld, P. (1989). Development of an electret microphone in silicon. Sensors and actuators, 17(3-4), 509-512. https://doi.org/10.1016/0250-6874(89)80038-1