Development of Pressure Contact Technology for Multi-chip SiC Modules with Low Parasitics

Lei Wang*, Wenbo Wang, Gert Rietveld, Raymond J.E. Hueting

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Conventional packaging limits the full exploitation of the high-frequency and high-power density capabilities of silicon-carbide (SiC) metal-semiconductor-oxide field-effect transistors. This work reports a pressure contact packaging technology on SiC modules to replace weak bonding elements and to achieve double-sided cooling. Three viable module layouts for a half bridge with multiple parallel chips are proposed, focusing on maximum power density and functional performance. A novel spring connector is designed to accommodate the small pad size and achieve pressure contacts on the chips. The path for the gate loop and power loop are optimized to ensure a balanced current distribution. The parasitic inductance of the experimental prototype with bus bars is only 4.76 nH, facilitating a high switching speed. The feasibility of the proposed packaging approach is confirmed by both extensive simulations and experiments.

Original languageEnglish
Title of host publication2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
PublisherIEEE
Pages202-209
Number of pages8
ISBN (Electronic)979-8-3503-1664-3, 979-8-3503-1663-6
ISBN (Print)979-8-3503-1665-0
DOIs
Publication statusPublished - 2 May 2024
Event39th IEEE Applied Power Electronics Conference and Exposition, APEC 2024 - Long Beach Convention & Entertainment Center, Long Beach, United States
Duration: 25 Feb 202429 Feb 2024
Conference number: 39

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
ISSN (Print)1048-2334

Conference

Conference39th IEEE Applied Power Electronics Conference and Exposition, APEC 2024
Abbreviated titleAPEC 2024
Country/TerritoryUnited States
CityLong Beach
Period25/02/2429/02/24

Keywords

  • 2024 OA procedure
  • power module
  • pressure contact packaging
  • silicon carbide
  • stray inductance
  • current balance

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