Device simulation and circuit simulation: applications to electromigration and electro-thermal interaction in bipolar transistors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings of the Fourth International Seminar on Simulation of Devices and Technologies, ISSDT'95
Place of Publication	Berg-en-Dal, Kruger National Park, South Africa
Pages	100-103
Publication status	Published - 15 Nov 1995

Keywords

@inproceedings{98b699fc6b8d4ff2a246011b4994846b,

title = "Device simulation and circuit simulation: applications to electromigration and electro-thermal interaction in bipolar transistors",

keywords = "METIS-113989",

author = "A.J. Mouthaan and B.H. Krabbenborg and J. Niehof and V. Petrescu",

year = "1995",

month = nov,

day = "15",

language = "Undefined",

pages = "100--103",

booktitle = "Proceedings of the Fourth International Seminar on Simulation of Devices and Technologies, ISSDT'95",

}

Device simulation and circuit simulation: applications to electromigration and electro-thermal interaction in bipolar transistors. / Mouthaan, A.J.; Krabbenborg, B.H.; Niehof, J. et al.
Proceedings of the Fourth International Seminar on Simulation of Devices and Technologies, ISSDT'95. Berg-en-Dal, Kruger National Park, South Africa, 1995. p. 100-103.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Device simulation and circuit simulation: applications to electromigration and electro-thermal interaction in bipolar transistors

AU - Mouthaan, A.J.

AU - Krabbenborg, B.H.

AU - Niehof, J.

AU - Petrescu, V.

PY - 1995/11/15

Y1 - 1995/11/15

KW - METIS-113989

M3 - Conference contribution

SP - 100

EP - 103

BT - Proceedings of the Fourth International Seminar on Simulation of Devices and Technologies, ISSDT'95

CY - Berg-en-Dal, Kruger National Park, South Africa

ER -