Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Original languageEnglish
Title of host publicationProceedings of the 22nd Semiconductor Advances for Future Electronics (SAFE) workshop 2019
Pages108-109
Number of pages2
Publication statusPublished - 4 Jul 2019
Event22nd Semiconductor Advances for Future Electronics Workshop, SAFE 2019 - Delft, Netherlands
Duration: 4 Jul 20194 Jul 2019
Conference number: 22

Workshop

Workshop22nd Semiconductor Advances for Future Electronics Workshop, SAFE 2019
Abbreviated titleSAFE 2019
CountryNetherlands
CityDelft
Period4/07/194/07/19

Cite this

Zhao, Y., Hueting, R., Veltkamp, H-W., Sanders, R. G. P., Wiegerink, R. J., & Lötters, J. C. (2019). Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures. In Proceedings of the 22nd Semiconductor Advances for Future Electronics (SAFE) workshop 2019 (pp. 108-109)