Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	Proceedings of the 22nd Semiconductor Advances for Future Electronics (SAFE) workshop 2019
Publisher	University of Twente
Pages	108-109
Number of pages	2
Publication status	Published - 4 Jul 2019
Event	22nd Semiconductor Advances for Future Electronics Workshop, SAFE 2019 - Delft, Netherlands Duration: 4 Jul 2019 → 4 Jul 2019 Conference number: 22

Workshop	22nd Semiconductor Advances for Future Electronics Workshop, SAFE 2019
Abbreviated title	SAFE 2019
Country/Territory	Netherlands
City	Delft
Period	4/07/19 → 4/07/19

Cite this

@inproceedings{08a00be8760247fd96a23a65d10d249c,

title = "Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures",

author = "Yiyuan Zhao and Ray Hueting and Henk-Willem Veltkamp and Sanders, {Remco G.P.} and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",

year = "2019",

month = jul,

day = "4",

language = "English",

pages = "108--109",

booktitle = "Proceedings of the 22nd Semiconductor Advances for Future Electronics (SAFE) workshop 2019",

publisher = "University of Twente",

address = "Netherlands",

note = "22nd Semiconductor Advances for Future Electronics Workshop, SAFE 2019, SAFE 2019 ; Conference date: 04-07-2019 Through 04-07-2019",

}

Zhao, Y, Hueting, R , Veltkamp, H-W , Sanders, RGP , Wiegerink, RJ & Lötters, JC 2019, Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures. in Proceedings of the 22nd Semiconductor Advances for Future Electronics (SAFE) workshop 2019. University of Twente, pp. 108-109, 22nd Semiconductor Advances for Future Electronics Workshop, SAFE 2019, Delft, Netherlands, 4/07/19.

Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures. / Zhao, Yiyuan ; Hueting, Ray ; Veltkamp, Henk-Willem et al.
Proceedings of the 22nd Semiconductor Advances for Future Electronics (SAFE) workshop 2019. University of Twente, 2019. p. 108-109.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Device simulation of heavily doped silicon electrical resistivity at extremely high temperatures

AU - Zhao, Yiyuan

AU - Hueting, Ray

AU - Veltkamp, Henk-Willem

AU - Sanders, Remco G.P.

AU - Wiegerink, Remco J.

AU - Lötters, Joost Conrad

N1 - Conference code: 22

PY - 2019/7/4

Y1 - 2019/7/4

M3 - Conference contribution

SP - 108

EP - 109

BT - Proceedings of the 22nd Semiconductor Advances for Future Electronics (SAFE) workshop 2019

PB - University of Twente

T2 - 22nd Semiconductor Advances for Future Electronics Workshop, SAFE 2019

Y2 - 4 July 2019 through 4 July 2019

ER -