Dielectric Behavior of Self-Assembled Monolayers on Conducting Metal Oxides

O. Yildirim; M.G. Maas; P.J. de Veen; Duc Minh Nguyen; David Reinhoudt; Dave H.A. Blank; Guus Rijnders; Jurriaan Huskens

doi:10.1039/c1jm15061h

Dielectric Behavior of Self-Assembled Monolayers on Conducting Metal Oxides

O. Yildirim, M.G. Maas, P.J. de Veen, Duc Minh Nguyen, David Reinhoudt, Dave H.A. Blank, Guus Rijnders, Jurriaan Huskens

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

5 Downloads (Pure)

Abstract

Pt top contacts have been deposited by pulsed laser deposition (PLD) onto bare and tetradecylphosphate (TDP) self-assembled monolayer (SAM)-modified Nb-doped SrTiO3 (Nb-STO) substrates. For the SAM-modified substrates, electrochemical Cu deposition occurred only at the places where electrical shorts existed between the top contact and the substrate. A nearly perfect yield of top contacts without shorts was obtained, which shows the dense packing and robustness of the SAM. The SAM decreased the leakage current about 500 times compared to the bare substrate. Alkylphosphate SAMs on conducting metal oxide substrates can therefore be used as dielectric thin films for device fabrication.

Original language	English
Pages (from-to)	2405-2409
Number of pages	5
Journal	Journal of materials chemistry
Volume	22
Issue number	6
DOIs	https://doi.org/10.1039/c1jm15061h
Publication status	Published - 2012

Access to Document

10.1039/c1jm15061h

Cite this

@article{b74776108568427390cc70ffc0a6493c,

title = "Dielectric Behavior of Self-Assembled Monolayers on Conducting Metal Oxides",

abstract = "Pt top contacts have been deposited by pulsed laser deposition (PLD) onto bare and tetradecylphosphate (TDP) self-assembled monolayer (SAM)-modified Nb-doped SrTiO3 (Nb-STO) substrates. For the SAM-modified substrates, electrochemical Cu deposition occurred only at the places where electrical shorts existed between the top contact and the substrate. A nearly perfect yield of top contacts without shorts was obtained, which shows the dense packing and robustness of the SAM. The SAM decreased the leakage current about 500 times compared to the bare substrate. Alkylphosphate SAMs on conducting metal oxide substrates can therefore be used as dielectric thin films for device fabrication.",

author = "O. Yildirim and M.G. Maas and {de Veen}, P.J. and Nguyen, {Duc Minh} and David Reinhoudt and Blank, {Dave H.A.} and Guus Rijnders and Jurriaan Huskens",

year = "2012",

doi = "10.1039/c1jm15061h",

language = "English",

volume = "22",

pages = "2405--2409",

journal = "Journal of materials chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "6",

}

TY - JOUR

T1 - Dielectric Behavior of Self-Assembled Monolayers on Conducting Metal Oxides

AU - Yildirim, O.

AU - Maas, M.G.

AU - de Veen, P.J.

AU - Nguyen, Duc Minh

AU - Reinhoudt, David

AU - Blank, Dave H.A.

AU - Rijnders, Guus

AU - Huskens, Jurriaan

PY - 2012

Y1 - 2012

N2 - Pt top contacts have been deposited by pulsed laser deposition (PLD) onto bare and tetradecylphosphate (TDP) self-assembled monolayer (SAM)-modified Nb-doped SrTiO3 (Nb-STO) substrates. For the SAM-modified substrates, electrochemical Cu deposition occurred only at the places where electrical shorts existed between the top contact and the substrate. A nearly perfect yield of top contacts without shorts was obtained, which shows the dense packing and robustness of the SAM. The SAM decreased the leakage current about 500 times compared to the bare substrate. Alkylphosphate SAMs on conducting metal oxide substrates can therefore be used as dielectric thin films for device fabrication.

AB - Pt top contacts have been deposited by pulsed laser deposition (PLD) onto bare and tetradecylphosphate (TDP) self-assembled monolayer (SAM)-modified Nb-doped SrTiO3 (Nb-STO) substrates. For the SAM-modified substrates, electrochemical Cu deposition occurred only at the places where electrical shorts existed between the top contact and the substrate. A nearly perfect yield of top contacts without shorts was obtained, which shows the dense packing and robustness of the SAM. The SAM decreased the leakage current about 500 times compared to the bare substrate. Alkylphosphate SAMs on conducting metal oxide substrates can therefore be used as dielectric thin films for device fabrication.

U2 - 10.1039/c1jm15061h

DO - 10.1039/c1jm15061h

M3 - Article

SN - 0959-9428

VL - 22

SP - 2405

EP - 2409

JO - Journal of materials chemistry

JF - Journal of materials chemistry

IS - 6

ER -

Dielectric Behavior of Self-Assembled Monolayers on Conducting Metal Oxides

Abstract

Access to Document

Fingerprint

Cite this