Dielectric breakdown I: A review of oxide breakdown

J.F. Verweij, J.F. Verweij, J.H. Klootwijk

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    Abstract

    This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.
    Original languageUndefined
    Pages (from-to)611-622
    JournalMicroelectronics journal
    Volume27
    Issue number7
    DOIs
    Publication statusPublished - 1996

    Keywords

    • METIS-111998
    • IR-15126

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