Dielectric breakdown II: Related projects at the University of Twente

J.H. Klootwijk, J.F. Verweij, J.F. Verweij, J.B. Rem, S. Bijlsma, S.J. Bijlsma

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    In this paper an overview is given of the related activities in our group of the University of Twente. These are on thin film transistors with the inherent difficulty of making a gate dielectric at low temperature, on thin dielectrics for EEPROM devices with well-known requirements with respect to charge retention and endurance and, finally, on thin film diodes in displays with unexpected breakdown properties.
    Original languageUndefined
    Pages (from-to)623-632
    JournalMicroelectronics journal
    Issue number7
    Publication statusPublished - 1996


    • METIS-111997
    • IR-15125

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