Dielectric breakdown II: Related projects at the University of Twente

J.H. Klootwijk, J.F. Verweij, J.F. Verweij, J.B. Rem, S. Bijlsma, S.J. Bijlsma

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    Abstract

    In this paper an overview is given of the related activities in our group of the University of Twente. These are on thin film transistors with the inherent difficulty of making a gate dielectric at low temperature, on thin dielectrics for EEPROM devices with well-known requirements with respect to charge retention and endurance and, finally, on thin film diodes in displays with unexpected breakdown properties.
    Original languageUndefined
    Pages (from-to)623-632
    JournalMicroelectronics journal
    Volume27
    Issue number7
    DOIs
    Publication statusPublished - 1996

    Keywords

    • METIS-111997
    • IR-15125

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