Dielectric engineering: Characterization, development and process damage minimization of various silicon oxides

Jan Germain Gabriel Ackaert

    Research output: ThesisPhD Thesis - Research external, graduation UT

    51 Downloads (Pure)

    Abstract

    Over the various chapters, this thesis describes the characterization and development of a number of applications of silicon dioxides. An oxynitride is developed allowing a much higher SiGe epitaxial deposition rate in a bipolar process. Also a tunneloxide for non volatile memory application is developed and characterized. Once the oxide has been formed and defined it is exposed to the sometimes harsh environments during the following processing steps. Possible process damage due to this exposure is characterized, evaluation methods are developed, process steps are engineered for damage reduction and protection methods are developed.
    Original languageEnglish
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Kuper, F.G., Supervisor
    Award date8 Sep 2004
    Place of PublicationEnschede, The Netherlands
    Publisher
    Print ISBNs90-365-2069-X
    Publication statusPublished - 8 Sep 2004

    Keywords

    • EWI-15712
    • METIS-218734
    • IR-41560

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  • Cite this

    Ackaert, J. G. G. (2004). Dielectric engineering: Characterization, development and process damage minimization of various silicon oxides. Enschede, The Netherlands: University of Twente.