Abstract
Over the various chapters, this thesis describes the characterization and development of a
number of applications of silicon dioxides. An oxynitride is developed allowing a much
higher SiGe epitaxial deposition rate in a bipolar process. Also a tunneloxide for non volatile
memory application is developed and characterized. Once the oxide has been formed and
defined it is exposed to the sometimes harsh environments during the following processing
steps. Possible process damage due to this exposure is characterized, evaluation methods are
developed, process steps are engineered for damage reduction and protection methods are
developed.
Original language | English |
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Awarding Institution |
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Supervisors/Advisors |
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Award date | 8 Sept 2004 |
Place of Publication | Enschede, The Netherlands |
Publisher | |
Print ISBNs | 90-365-2069-X |
Publication status | Published - 8 Sept 2004 |
Keywords
- EWI-15712
- METIS-218734
- IR-41560