Dielectric-permittivity-driven charge carrier modulation at oxide interfaces

W. Siemons; Mark Huijben; Augustinus J.H.M. Rijnders; David H.A. Blank; Theodore H. Geballe; Malcolm R. Beasley; Gertjan Koster

doi:10.1103/PhysRevB.81.241308

Dielectric-permittivity-driven charge carrier modulation at oxide interfaces

W. Siemons, Mark Huijben, Augustinus J.H.M. Rijnders, David H.A. Blank, Theodore H. Geballe, Malcolm R. Beasley, Gertjan Koster

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

High-quality bilayers of La-doped SrTiO3 (STO) and LaAlO3 (LAO) on SrTiO3 have been grown controlling the location and behavior of the charge carriers by changing the thicknesses of the layers, which are dielectrically mismatched. In this system, the charge carriers are created at the La:SrTiO3/LAO interface and spread out toward the substrate due to the increase in dielectric constant as the temperature is lowered. When the electrons reach the interface of the La:SrTiO3 and the pure STO, they display enhanced mobility in the quantum well at that interface for specific thicknesses.

Original language	English
Article number	241308
Pages (from-to)	-
Journal	Physical review B: Condensed matter and materials physics
Volume	81
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.81.241308
Publication status	Published - 2010

Keywords

IR-72317
METIS-269427

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1103/PhysRevB.81.241308

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title = "Dielectric-permittivity-driven charge carrier modulation at oxide interfaces",

abstract = "High-quality bilayers of La-doped SrTiO3 (STO) and LaAlO3 (LAO) on SrTiO3 have been grown controlling the location and behavior of the charge carriers by changing the thicknesses of the layers, which are dielectrically mismatched. In this system, the charge carriers are created at the La:SrTiO3/LAO interface and spread out toward the substrate due to the increase in dielectric constant as the temperature is lowered. When the electrons reach the interface of the La:SrTiO3 and the pure STO, they display enhanced mobility in the quantum well at that interface for specific thicknesses.",

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T1 - Dielectric-permittivity-driven charge carrier modulation at oxide interfaces

AU - Siemons, W.

AU - Huijben, Mark

AU - Rijnders, Augustinus J.H.M.

AU - Blank, David H.A.

AU - Geballe, Theodore H.

AU - Beasley, Malcolm R.

AU - Koster, Gertjan

PY - 2010

Y1 - 2010

N2 - High-quality bilayers of La-doped SrTiO3 (STO) and LaAlO3 (LAO) on SrTiO3 have been grown controlling the location and behavior of the charge carriers by changing the thicknesses of the layers, which are dielectrically mismatched. In this system, the charge carriers are created at the La:SrTiO3/LAO interface and spread out toward the substrate due to the increase in dielectric constant as the temperature is lowered. When the electrons reach the interface of the La:SrTiO3 and the pure STO, they display enhanced mobility in the quantum well at that interface for specific thicknesses.

AB - High-quality bilayers of La-doped SrTiO3 (STO) and LaAlO3 (LAO) on SrTiO3 have been grown controlling the location and behavior of the charge carriers by changing the thicknesses of the layers, which are dielectrically mismatched. In this system, the charge carriers are created at the La:SrTiO3/LAO interface and spread out toward the substrate due to the increase in dielectric constant as the temperature is lowered. When the electrons reach the interface of the La:SrTiO3 and the pure STO, they display enhanced mobility in the quantum well at that interface for specific thicknesses.

KW - IR-72317

KW - METIS-269427

U2 - 10.1103/PhysRevB.81.241308

DO - 10.1103/PhysRevB.81.241308

M3 - Article

SN - 1098-0121

VL - 81

SP - -

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

IS - 24

M1 - 241308

ER -

Dielectric-permittivity-driven charge carrier modulation at oxide interfaces

Abstract

Keywords

UN SDGs

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