Dielectric-permittivity-driven charge carrier modulation at oxide interfaces

W. Siemons, Mark Huijben, Augustinus J.H.M. Rijnders, David H.A. Blank, Theodore H. Geballe, Malcolm R. Beasley, Gertjan Koster

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Abstract

High-quality bilayers of La-doped SrTiO3 (STO) and LaAlO3 (LAO) on SrTiO3 have been grown controlling the location and behavior of the charge carriers by changing the thicknesses of the layers, which are dielectrically mismatched. In this system, the charge carriers are created at the La:SrTiO3/LAO interface and spread out toward the substrate due to the increase in dielectric constant as the temperature is lowered. When the electrons reach the interface of the La:SrTiO3 and the pure STO, they display enhanced mobility in the quantum well at that interface for specific thicknesses.
Original languageEnglish
Article number241308
Pages (from-to)-
JournalPhysical review B: Condensed matter and materials physics
Volume81
Issue number24
DOIs
Publication statusPublished - 2010

Keywords

  • IR-72317
  • METIS-269427

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