Abstract
An analysis procedure was developed that enables studying diffusion in ultrathin films by utilizing the depth-resolved information that is contained in the background of low energy ion scattering (LEIS) spectra. Using a high-sensitivity analyzer/detector combination allows for such a low ion dose that the ion-induced perturbation caused by this technique is negligible and not measurable with LEIS. The developed analysis procedure provides a unique opportunity to study diffusion processes in nanoscaled systems. It was applied to the Mo/Si system, a system that is relevant for extreme ultraviolet optics.
Original language | English |
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Pages (from-to) | 063107-1-063107-3 |
Number of pages | 3 |
Journal | Applied physics letters |
Volume | 94 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- IR-72831
- METIS-258514