Diffusion Barrier Layers for Copper IC Metallization

A.A. van Zomeren, J. Holleman, P.H. Woerlee

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationEnschede, the Netherlands
    Publication statusPublished - 23 Jun 1998

    Keywords

    • METIS-114888

    Cite this

    van Zomeren, A. A., Holleman, J., & Woerlee, P. H. (1998, Jun 23). Diffusion Barrier Layers for Copper IC Metallization. Enschede, the Netherlands.
    van Zomeren, A.A. ; Holleman, J. ; Woerlee, P.H. / Diffusion Barrier Layers for Copper IC Metallization. 1998. Enschede, the Netherlands.
    @misc{9f46d1aed46845f296731452caf593b8,
    title = "Diffusion Barrier Layers for Copper IC Metallization",
    keywords = "METIS-114888",
    author = "{van Zomeren}, A.A. and J. Holleman and P.H. Woerlee",
    year = "1998",
    month = "6",
    day = "23",
    language = "Undefined",
    type = "Other",

    }

    van Zomeren, AA, Holleman, J & Woerlee, PH 1998, Diffusion Barrier Layers for Copper IC Metallization. Enschede, the Netherlands.

    Diffusion Barrier Layers for Copper IC Metallization. / van Zomeren, A.A.; Holleman, J.; Woerlee, P.H.

    Enschede, the Netherlands. 1998, .

    Research output: Other contributionOther research output

    TY - GEN

    T1 - Diffusion Barrier Layers for Copper IC Metallization

    AU - van Zomeren, A.A.

    AU - Holleman, J.

    AU - Woerlee, P.H.

    PY - 1998/6/23

    Y1 - 1998/6/23

    KW - METIS-114888

    M3 - Other contribution

    CY - Enschede, the Netherlands

    ER -

    van Zomeren AA, Holleman J, Woerlee PH. Diffusion Barrier Layers for Copper IC Metallization. 1998.