Diffusion mechanisms and the nature of Si ad-dimers on Ge(001)

E. Zoethout, Henricus J.W. Zandvliet, W.C.U. Wulfhekel, G. Rosenfeld, Bene Poelsema

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23 Citations (Scopus)


The thermal motion of Si ad-dimers on Ge(001) has been studied with scanning tunneling microscopy. At room temperature the Si ad-dimers residing on top of the substrate dimer rows perform a one-dimensional random walk along the substrate dimer rows. The activation barrier for the diffusion process is estimated to be 0.83 eV. Although the preferential diffusion direction is along the substrate dimer rows, also diffusion across the rows has been observed. The latter diffusion process consists of two separate events: a jump of a Si ad-dimer from an on-top position to a position in the trough between the substrate dimer rows and a hop from a trough position to an on-top position.
Original languageEnglish
Pages (from-to)16167-16171
Number of pages5
JournalPhysical review B: Condensed matter and materials physics
Issue number58
Publication statusPublished - 1998


  • IR-73147
  • METIS-128684


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