Diffusion of Si and Ge dimers on Ge (001) surfaces

T.V. Afanasieva, S.Yu Bulavenko, I.F. Koval, Henricus J.W. Zandvliet

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We have studied the various diffusion pathways of Si and Ge dimers on the Ge (001) surface using scanning tunneling microscopy. The adsorbed dimers can be classified into two categories: Dimers adsorbed on top of the substrate rows and dimers adsorbed in the troughs between the substrate rows. There are three different diffusion pathways for the dimers: Along the substrate rows, across the substrate rows, and in the troughs between the substrate rows. The activation barriers for diffusion of these three pathways have been determined for both Ge and Si dimers on Ge (001). The barriers for dimer diffusion of the system Ge/Ge (001) are slightly lower than for the Si/Ge (001) system. As compared to Si on Si (001) the activation barriers for dimer diffusion on Ge (001) are significantly lower
Original languageUndefined
Pages (from-to)1452-1456
Number of pages5
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2003


  • METIS-214152
  • IR-73077

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