Diffusion of Si and Ge dimers on Ge (001) surfaces

T.V. Afanasieva, S.Yu Bulavenko, I.F. Koval, Henricus J.W. Zandvliet

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We have studied the various diffusion pathways of Si and Ge dimers on the Ge (001) surface using scanning tunneling microscopy. The adsorbed dimers can be classified into two categories: Dimers adsorbed on top of the substrate rows and dimers adsorbed in the troughs between the substrate rows. There are three different diffusion pathways for the dimers: Along the substrate rows, across the substrate rows, and in the troughs between the substrate rows. The activation barriers for diffusion of these three pathways have been determined for both Ge and Si dimers on Ge (001). The barriers for dimer diffusion of the system Ge/Ge (001) are slightly lower than for the Si/Ge (001) system. As compared to Si on Si (001) the activation barriers for dimer diffusion on Ge (001) are significantly lower
Original languageUndefined
Pages (from-to)1452-1456
Number of pages5
JournalJournal of applied physics
Volume93
Issue number3
DOIs
Publication statusPublished - 2003

Keywords

  • METIS-214152
  • IR-73077

Cite this

Afanasieva, T.V. ; Bulavenko, S.Yu ; Koval, I.F. ; Zandvliet, Henricus J.W. / Diffusion of Si and Ge dimers on Ge (001) surfaces. In: Journal of applied physics. 2003 ; Vol. 93, No. 3. pp. 1452-1456.
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Diffusion of Si and Ge dimers on Ge (001) surfaces. / Afanasieva, T.V.; Bulavenko, S.Yu; Koval, I.F.; Zandvliet, Henricus J.W.

In: Journal of applied physics, Vol. 93, No. 3, 2003, p. 1452-1456.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Diffusion of Si and Ge dimers on Ge (001) surfaces

AU - Afanasieva, T.V.

AU - Bulavenko, S.Yu

AU - Koval, I.F.

AU - Zandvliet, Henricus J.W.

PY - 2003

Y1 - 2003

N2 - We have studied the various diffusion pathways of Si and Ge dimers on the Ge (001) surface using scanning tunneling microscopy. The adsorbed dimers can be classified into two categories: Dimers adsorbed on top of the substrate rows and dimers adsorbed in the troughs between the substrate rows. There are three different diffusion pathways for the dimers: Along the substrate rows, across the substrate rows, and in the troughs between the substrate rows. The activation barriers for diffusion of these three pathways have been determined for both Ge and Si dimers on Ge (001). The barriers for dimer diffusion of the system Ge/Ge (001) are slightly lower than for the Si/Ge (001) system. As compared to Si on Si (001) the activation barriers for dimer diffusion on Ge (001) are significantly lower

AB - We have studied the various diffusion pathways of Si and Ge dimers on the Ge (001) surface using scanning tunneling microscopy. The adsorbed dimers can be classified into two categories: Dimers adsorbed on top of the substrate rows and dimers adsorbed in the troughs between the substrate rows. There are three different diffusion pathways for the dimers: Along the substrate rows, across the substrate rows, and in the troughs between the substrate rows. The activation barriers for diffusion of these three pathways have been determined for both Ge and Si dimers on Ge (001). The barriers for dimer diffusion of the system Ge/Ge (001) are slightly lower than for the Si/Ge (001) system. As compared to Si on Si (001) the activation barriers for dimer diffusion on Ge (001) are significantly lower

KW - METIS-214152

KW - IR-73077

U2 - 10.1063/1.1533107

DO - 10.1063/1.1533107

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