An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.
|Name||Digest of Technical Papers IEEE ISSCC 2008|
|Conference||IEEE International Solid- State Circuits Conference, ISSCC 2008|
|Period||3/02/08 → 7/02/08|