@inproceedings{f86c6ce5342c496083c9867a93fe0e65,
title = "Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology",
abstract = "An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.",
keywords = "IR-64625, METIS-255870, EWI-11903",
author = "M. Acar and Annema, {Anne J.} and Bram Nauta",
year = "2008",
month = feb,
day = "8",
doi = "10.1109/ISSCC.2008.4523291",
language = "English",
isbn = "978-1-4244-2011-7",
series = "Digest of Technical Papers IEEE ISSCC 2008",
publisher = "IEEE",
pages = "530--531",
booktitle = "Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008)",
address = "United States",
note = "IEEE International Solid- State Circuits Conference, ISSCC 2008, ISSCC ; Conference date: 03-02-2008 Through 07-02-2008",
}