Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

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    Abstract

    An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.
    Original languageEnglish
    Title of host publicationProceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008)
    Place of PublicationPiscataway
    PublisherIEEE
    Pages530-531
    Number of pages2
    ISBN (Print)978-1-4244-2011-7
    DOIs
    Publication statusPublished - 8 Feb 2008
    EventIEEE International Solid- State Circuits Conference, ISSCC 2008 - San Francisco, United States
    Duration: 3 Feb 20087 Feb 2008

    Publication series

    NameDigest of Technical Papers IEEE ISSCC 2008
    PublisherIEEE Press

    Conference

    ConferenceIEEE International Solid- State Circuits Conference, ISSCC 2008
    Abbreviated titleISSCC
    CountryUnited States
    CitySan Francisco
    Period3/02/087/02/08

    Keywords

    • IR-64625
    • METIS-255870
    • EWI-11903

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  • Cite this

    Acar, M., Annema, A. J., & Nauta, B. (2008). Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. In Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008) (pp. 530-531). (Digest of Technical Papers IEEE ISSCC 2008). Piscataway: IEEE. https://doi.org/10.1109/ISSCC.2008.4523291