Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

M. Acar; Anne J. Annema; Bram Nauta

doi:10.1109/ISSCC.2008.4523291

Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

M. Acar, Anne J. Annema, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

130 Downloads (Pure)

Abstract

An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.

Original language	English
Title of host publication	Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008)
Place of Publication	Piscataway
Publisher	IEEE
Pages	530-531
Number of pages	2
ISBN (Print)	978-1-4244-2011-7
DOIs	https://doi.org/10.1109/ISSCC.2008.4523291
Publication status	Published - 8 Feb 2008
Event	IEEE International Solid- State Circuits Conference, ISSCC 2008 - San Francisco, United States Duration: 3 Feb 2008 → 7 Feb 2008

Publication series

Name	Digest of Technical Papers IEEE ISSCC 2008
Publisher	IEEE Press

Conference

Conference	IEEE International Solid- State Circuits Conference, ISSCC 2008
Abbreviated title	ISSCC
Country/Territory	United States
City	San Francisco
Period	3/02/08 → 7/02/08

Keywords

IR-64625
METIS-255870
EWI-11903

Access to Document

10.1109/ISSCC.2008.4523291

Acar_IEEE_ISSCC2008Final published version, 995 KB

Cite this

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title = "Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology",

abstract = "An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.",

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note = "IEEE International Solid- State Circuits Conference, ISSCC 2008, ISSCC ; Conference date: 03-02-2008 Through 07-02-2008",

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Acar, M, Annema, AJ & Nauta, B 2008, Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. in Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008). Digest of Technical Papers IEEE ISSCC 2008, IEEE, Piscataway, pp. 530-531, IEEE International Solid- State Circuits Conference, ISSCC 2008, San Francisco, California, United States, 3/02/08. https://doi.org/10.1109/ISSCC.2008.4523291

Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. / Acar, M.; Annema, Anne J.; Nauta, Bram.

Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008). Piscataway : IEEE, 2008. p. 530-531 (Digest of Technical Papers IEEE ISSCC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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KW - IR-64625

KW - METIS-255870

KW - EWI-11903

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DO - 10.1109/ISSCC.2008.4523291

M3 - Conference contribution

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T3 - Digest of Technical Papers IEEE ISSCC 2008

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Y2 - 3 February 2008 through 7 February 2008

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Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

Abstract

Publication series

Conference

Keywords

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