Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)
47 Downloads (Pure)

Abstract

An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.
Original languageEnglish
Title of host publicationProceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008)
Place of PublicationPiscataway
PublisherIEEE
Pages530-531
Number of pages2
ISBN (Print)978-1-4244-2011-7
DOIs
Publication statusPublished - 8 Feb 2008
EventIEEE International Solid- State Circuits Conference, ISSCC 2008 - San Francisco, United States
Duration: 3 Feb 20087 Feb 2008

Publication series

NameDigest of Technical Papers IEEE ISSCC 2008
PublisherIEEE Press

Conference

ConferenceIEEE International Solid- State Circuits Conference, ISSCC 2008
Abbreviated titleISSCC
CountryUnited States
CitySan Francisco
Period3/02/087/02/08

Fingerprint

Transistors
Oxides
Analog circuits
Power amplifiers
Redundancy
Electric potential
Power transistors

Keywords

  • IR-64625
  • METIS-255870
  • EWI-11903

Cite this

Acar, M., Annema, A. J., & Nauta, B. (2008). Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. In Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008) (pp. 530-531). (Digest of Technical Papers IEEE ISSCC 2008). Piscataway: IEEE. https://doi.org/10.1109/ISSCC.2008.4523291
Acar, M. ; Annema, Anne J. ; Nauta, Bram. / Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008). Piscataway : IEEE, 2008. pp. 530-531 (Digest of Technical Papers IEEE ISSCC 2008).
@inproceedings{f86c6ce5342c496083c9867a93fe0e65,
title = "Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology",
abstract = "An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.",
keywords = "IR-64625, METIS-255870, EWI-11903",
author = "M. Acar and Annema, {Anne J.} and Bram Nauta",
year = "2008",
month = "2",
day = "8",
doi = "10.1109/ISSCC.2008.4523291",
language = "English",
isbn = "978-1-4244-2011-7",
series = "Digest of Technical Papers IEEE ISSCC 2008",
publisher = "IEEE",
pages = "530--531",
booktitle = "Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008)",
address = "United States",

}

Acar, M, Annema, AJ & Nauta, B 2008, Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. in Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008). Digest of Technical Papers IEEE ISSCC 2008, IEEE, Piscataway, pp. 530-531, IEEE International Solid- State Circuits Conference, ISSCC 2008, San Francisco, United States, 3/02/08. https://doi.org/10.1109/ISSCC.2008.4523291

Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. / Acar, M.; Annema, Anne J.; Nauta, Bram.

Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008). Piscataway : IEEE, 2008. p. 530-531 (Digest of Technical Papers IEEE ISSCC 2008).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology

AU - Acar, M.

AU - Annema, Anne J.

AU - Nauta, Bram

PY - 2008/2/8

Y1 - 2008/2/8

N2 - An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.

AB - An approach is introduced to extend the lifetime of high-voltage analog circuits in CMOS technologies based on redundancy, like that known for DRAMS. A large power transistor is segmented into N smaller ones in parallel. If a sub-transistor is broken, it is removed automatically from the compound transistor. The principleis demonstrated in an RF CMOS Power Amplifier (PA) in standard 1.2V 90nm CMOS.

KW - IR-64625

KW - METIS-255870

KW - EWI-11903

U2 - 10.1109/ISSCC.2008.4523291

DO - 10.1109/ISSCC.2008.4523291

M3 - Conference contribution

SN - 978-1-4244-2011-7

T3 - Digest of Technical Papers IEEE ISSCC 2008

SP - 530

EP - 531

BT - Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008)

PB - IEEE

CY - Piscataway

ER -

Acar M, Annema AJ, Nauta B. Digital Detection of Oxide Breakdown and Life-Time Extension in Submicron CMOS Technology. In Proceedings of the 2008 IEEE International Solid- State Circuits Conference (ISSCC2008). Piscataway: IEEE. 2008. p. 530-531. (Digest of Technical Papers IEEE ISSCC 2008). https://doi.org/10.1109/ISSCC.2008.4523291