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Dimensional Control in Corner Lithography for Wafer-Scale Fabrication of Nano-Apertures

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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    Abstract

    In this paper we investigate a new method to fabricate 3D-oriented nanostructures in wafer scale, and apply it to fabricate a nano-apertures at the apex of a pyramid. A number of new technologies require the use of apertures to serve as electrical, nano fluidic or optical probes. Controlling the size of the aperture is one of the key problems in fabrication process. Our approach is based on corner lithography and offers wafer scale control of the size of the aperture in diameters less than 1µm. We show how to control the size of the nano-aperture by timed isotropic etching of silicon nitride, which serves as a mask for the aperture formation.
    Original languageEnglish
    Title of host publication6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages940-943
    Number of pages4
    ISBN (Electronic)978-1-61284-777-1
    ISBN (Print)978-1-61284-775-7
    DOIs
    Publication statusPublished - 20 Feb 2011
    Event6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
    Duration: 20 Feb 2011 → 23 Feb 2011
    Conference number: 6

    Conference

    Conference6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
    Abbreviated titleNEMS
    Country/TerritoryTaiwan
    CityKaohsiung
    Period20/02/11 → 23/02/11

    UN SDGs

    This output contributes to the following UN Sustainable Development Goals (SDGs)

    1. SDG 9 - Industry, Innovation, and Infrastructure
      SDG 9 Industry, Innovation, and Infrastructure

    Keywords

    • METIS-278726
    • 3-D
    • IR-78098
    • Corner Lithography
    • EWI-20292
    • Nanofabrication
    • LOCOS
    • Silicon nitride
    • Nanoaperture

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