Dimensional scaling effects on transport properties of p-i-n diodes

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    Abstract

    Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we characterized lateral p-i-n structures using thin silicon on insulator (SOI) layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also studied different ways to fabricate silicon lines/fins.
    Original languageUndefined
    Title of host publication10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages457-459
    Number of pages3
    ISBN (Print)978-90-73461-49-9
    Publication statusPublished - 29 Nov 2007
    Event10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands
    Duration: 29 Nov 200730 Nov 2007

    Publication series

    Name
    PublisherTechnology Foundation STW
    Number7

    Workshop

    Workshop10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
    CountryNetherlands
    CityVeldhoven
    Period29/11/0730/11/07

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-245934
    • IR-62111
    • EWI-11719

    Cite this

    Rajasekharan, B., Salm, C., Hueting, R. J. E., Hoang, T., van der Wiel, W. G., & Schmitz, J. (2007). Dimensional scaling effects on transport properties of p-i-n diodes. In 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE) (pp. 457-459). Utrecht, The Netherlands: STW.