Dimensional scaling effects on transport properties of p-i-n diodes

B. Rajasekharan; Cora Salm; Raymond Josephus Engelbart Hueting; T. Hoang; Wilfred Gerard van der Wiel; Jurriaan Schmitz

Dimensional scaling effects on transport properties of p-i-n diodes

B. Rajasekharan, Cora Salm, Raymond Josephus Engelbart Hueting, T. Hoang, Wilfred Gerard van der Wiel, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we characterized lateral p-i-n structures using thin silicon on insulator (SOI) layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also studied different ways to fabricate silicon lines/fins.

Original language	Undefined
Title of host publication	10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	457-459
Number of pages	3
ISBN (Print)	978-90-73461-49-9
Publication status	Published - 29 Nov 2007
Event	10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 - Veldhoven, Netherlands Duration: 29 Nov 2007 → 30 Nov 2007

Publication series

Name
Publisher	Technology Foundation STW
Number	7

Workshop

Workshop	10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007
Country/Territory	Netherlands
City	Veldhoven
Period	29/11/07 → 30/11/07

Keywords

SC-ICF: Integrated Circuit Fabrication
METIS-245934
IR-62111
EWI-11719

Access to Document

http://eprints.eemcs.utwente.nl/secure2/11719/01/rajasekharan.pdf

Cite this

@inproceedings{524fdab904d44d4e804a0c447257340f,

title = "Dimensional scaling effects on transport properties of p-i-n diodes",

abstract = "Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we characterized lateral p-i-n structures using thin silicon on insulator (SOI) layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also studied different ways to fabricate silicon lines/fins.",

keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-245934, IR-62111, EWI-11719",

author = "B. Rajasekharan and Cora Salm and Hueting, {Raymond Josephus Engelbart} and T. Hoang and {van der Wiel}, {Wilfred Gerard} and Jurriaan Schmitz",

year = "2007",

month = nov,

day = "29",

language = "Undefined",

isbn = "978-90-73461-49-9",

publisher = "STW",

number = "7",

pages = "457--459",

booktitle = "10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)",

note = "10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007 ; Conference date: 29-11-2007 Through 30-11-2007",

}

Rajasekharan, B, Salm, C , Hueting, RJE, Hoang, T, van der Wiel, WG & Schmitz, J 2007, Dimensional scaling effects on transport properties of p-i-n diodes. in 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). STW, Utrecht, The Netherlands, pp. 457-459, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007, Veldhoven, Netherlands, 29/11/07. <http://eprints.eemcs.utwente.nl/secure2/11719/01/rajasekharan.pdf>

Dimensional scaling effects on transport properties of p-i-n diodes. / Rajasekharan, B.; Salm, Cora ; Hueting, Raymond Josephus Engelbart et al.
10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE). Utrecht, The Netherlands: STW, 2007. p. 457-459.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Dimensional scaling effects on transport properties of p-i-n diodes

AU - Rajasekharan, B.

AU - Salm, Cora

AU - Hueting, Raymond Josephus Engelbart

AU - Hoang, T.

AU - van der Wiel, Wilfred Gerard

AU - Schmitz, Jurriaan

PY - 2007/11/29

Y1 - 2007/11/29

N2 - Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we characterized lateral p-i-n structures using thin silicon on insulator (SOI) layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also studied different ways to fabricate silicon lines/fins.

AB - Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we characterized lateral p-i-n structures using thin silicon on insulator (SOI) layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also studied different ways to fabricate silicon lines/fins.

KW - SC-ICF: Integrated Circuit Fabrication

KW - METIS-245934

KW - IR-62111

KW - EWI-11719

M3 - Conference contribution

SN - 978-90-73461-49-9

SP - 457

EP - 459

BT - 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)

PB - STW

CY - Utrecht, The Netherlands

T2 - 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007

Y2 - 29 November 2007 through 30 November 2007

ER -