Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

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    Abstract

    Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.
    Original languageUndefined
    Title of host publicationProceedings of the 9th Conference on ULtimate Integration on Silicon
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages195-198
    Number of pages4
    ISBN (Print)978-1-4244-1730-8
    DOIs
    Publication statusPublished - 13 Mar 2008

    Publication series

    NameElectron Device Society
    PublisherIEEE Computer Society
    NumberDTR08-9

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • IR-64873
    • METIS-251075
    • EWI-13055

    Cite this

    Rajasekharan, B., Salm, C., Hueting, R. J. E., Hoang, T., & Schmitz, J. (2008). Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. In Proceedings of the 9th Conference on ULtimate Integration on Silicon (pp. 195-198). [10.1109/ULIS.2008.4527172] (Electron Device Society; No. DTR08-9). Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/ULIS.2008.4527172