Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension.
With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.
|Name||Electron Device Society|
|Publisher||IEEE Computer Society|
|Conference||9th Conference on ULtimate Integration on Silicon, Udine, Italy|
|Period||13/03/08 → …|
- SC-ICF: Integrated Circuit Fabrication