Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

B. Rajasekharan; Cora Salm; Raymond Josephus Engelbart Hueting; T. Hoang; Jurriaan Schmitz

doi:10.1109/ULIS.2008.4527172

Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes

B. Rajasekharan, Cora Salm, Raymond Josephus Engelbart Hueting, T. Hoang, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

13 Citations (Scopus)

70 Downloads (Pure)

Abstract

Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.

Original language	Undefined
Title of host publication	Proceedings of the 9th Conference on ULtimate Integration on Silicon
Place of Publication	Piscataway
Publisher	IEEE Computer Society Press
Pages	195-198
Number of pages	4
ISBN (Print)	978-1-4244-1730-8
DOIs	https://doi.org/10.1109/ULIS.2008.4527172
Publication status	Published - 13 Mar 2008

Publication series

Name	Electron Device Society
Publisher	IEEE Computer Society
Number	DTR08-9

Keywords

SC-ICF: Integrated Circuit Fabrication
IR-64873
METIS-251075
EWI-13055

Access to Document

10.1109/ULIS.2008.4527172

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Cite this

Rajasekharan, B., Salm, C., Hueting, R. J. E., Hoang, T., & Schmitz, J. (2008). Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. In Proceedings of the 9th Conference on ULtimate Integration on Silicon (pp. 195-198). [10.1109/ULIS.2008.4527172] (Electron Device Society; No. DTR08-9). Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/ULIS.2008.4527172

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abstract = "Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.",

keywords = "SC-ICF: Integrated Circuit Fabrication, IR-64873, METIS-251075, EWI-13055",

author = "B. Rajasekharan and Cora Salm and Hueting, {Raymond Josephus Engelbart} and T. Hoang and Jurriaan Schmitz",

note = "10.1109/ULIS.2008.4527172",

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doi = "10.1109/ULIS.2008.4527172",

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isbn = "978-1-4244-1730-8",

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Rajasekharan, B, Salm, C , Hueting, RJE, Hoang, T & Schmitz, J 2008, Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. in Proceedings of the 9th Conference on ULtimate Integration on Silicon., 10.1109/ULIS.2008.4527172, Electron Device Society, no. DTR08-9, IEEE Computer Society Press, Piscataway, pp. 195-198. https://doi.org/10.1109/ULIS.2008.4527172

Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. / Rajasekharan, B.; Salm, Cora ; Hueting, Raymond Josephus Engelbart; Hoang, T.; Schmitz, Jurriaan.

Proceedings of the 9th Conference on ULtimate Integration on Silicon. Piscataway : IEEE Computer Society Press, 2008. p. 195-198 10.1109/ULIS.2008.4527172 (Electron Device Society; No. DTR08-9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.

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Rajasekharan B, Salm C , Hueting RJE, Hoang T, Schmitz J. Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. In Proceedings of the 9th Conference on ULtimate Integration on Silicon. Piscataway: IEEE Computer Society Press. 2008. p. 195-198. 10.1109/ULIS.2008.4527172. (Electron Device Society; DTR08-9). https://doi.org/10.1109/ULIS.2008.4527172