@inproceedings{dc5119b1b5e447908a212ec65dc0f44a,
title = "Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes",
abstract = "Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.",
keywords = "SC-ICF: Integrated Circuit Fabrication, IR-64873, METIS-251075, EWI-13055",
author = "B. Rajasekharan and Cora Salm and Hueting, {Raymond Josephus Engelbart} and T. Hoang and Jurriaan Schmitz",
note = "10.1109/ULIS.2008.4527172 ; null ; Conference date: 13-03-2008",
year = "2008",
month = mar,
day = "13",
doi = "10.1109/ULIS.2008.4527172",
language = "Undefined",
isbn = "978-1-4244-1730-8",
series = "Electron Device Society",
publisher = "IEEE Computer Society Press",
number = "DTR08-9",
pages = "195--198",
booktitle = "Proceedings of the 9th Conference on ULtimate Integration on Silicon",
}