Diode design for studying material defect distributions with avalanche-mode light emission

M. Krakers, T. Knezevic, K.M. Batenburg, X. Liu, L.K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.

Original languageEnglish
Title of host publication2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings
Place of PublicationPiscataway, NJ
PublisherIEEE
Chapter9.2
ISBN (Electronic)978-1-7281-4008-7
ISBN (Print)978-1-7281-4009-4
DOIs
Publication statusPublished - May 2020
Event33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 - Online, Edinburgh, United Kingdom
Duration: 4 May 202018 May 2020
Conference number: 33

Publication series

NameIEEE International Conference on Microelectronic Test Structures
PublisherIEEE
Volume2020
ISSN (Print)1071-9032
ISSN (Electronic)2158-1029

Conference

Conference33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020
Abbreviated titleICMTS 2020
CountryUnited Kingdom
CityEdinburgh
Period4/05/2018/05/20

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  • Cite this

    Krakers, M., Knezevic, T., Batenburg, K. M., Liu, X., & Nanver, L. K. (2020). Diode design for studying material defect distributions with avalanche-mode light emission. In 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings [9107933] (IEEE International Conference on Microelectronic Test Structures; Vol. 2020). Piscataway, NJ: IEEE. https://doi.org/10.1109/ICMTS48187.2020.9107933