Diode design for studying material defect distributions with avalanche-mode light emission

M. Krakers; T. Knezevic; K.M. Batenburg; X. Liu; L.K. Nanver

doi:10.1109/ICMTS48187.2020.9107933

Diode design for studying material defect distributions with avalanche-mode light emission

M. Krakers, T. Knezevic, K.M. Batenburg, X. Liu, L.K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

59 Downloads (Pure)

Abstract

Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.

Original language	English
Title of host publication	2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings
Place of Publication	Piscataway, NJ
Publisher	IEEE
Chapter	9.2
ISBN (Electronic)	978-1-7281-4008-7
ISBN (Print)	978-1-7281-4009-4
DOIs	https://doi.org/10.1109/ICMTS48187.2020.9107933
Publication status	Published - 4 Jun 2020
Event	33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 - Online, Edinburgh, United Kingdom Duration: 4 May 2020 → 18 May 2020 Conference number: 33

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Publisher	IEEE
Volume	2020
ISSN (Print)	1071-9032
ISSN (Electronic)	2158-1029

Conference

Conference	33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020
Abbreviated title	ICMTS 2020
Country/Territory	United Kingdom
City	Edinburgh
Period	4/05/20 → 18/05/20

Keywords

22/3 OA procedure

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10.1109/ICMTS48187.2020.9107933

Krakers2020diodeFinal published version, 463 KBLicence: Taverne

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Krakers, M., Knezevic, T., Batenburg, K. M., Liu, X., & Nanver, L. K. (2020). Diode design for studying material defect distributions with avalanche-mode light emission. In 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings Article 9107933 (IEEE International Conference on Microelectronic Test Structures; Vol. 2020). IEEE. https://doi.org/10.1109/ICMTS48187.2020.9107933

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title = "Diode design for studying material defect distributions with avalanche-mode light emission",

abstract = "Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.",

keywords = "22/3 OA procedure",

author = "M. Krakers and T. Knezevic and K.M. Batenburg and X. Liu and L.K. Nanver",

year = "2020",

month = jun,

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doi = "10.1109/ICMTS48187.2020.9107933",

language = "English",

isbn = "978-1-7281-4009-4",

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booktitle = "2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings",

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note = "33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020, ICMTS 2020 ; Conference date: 04-05-2020 Through 18-05-2020",

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Krakers, M, Knezevic, T, Batenburg, KM, Liu, X & Nanver, LK 2020, Diode design for studying material defect distributions with avalanche-mode light emission. in 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings., 9107933, IEEE International Conference on Microelectronic Test Structures, vol. 2020, IEEE, Piscataway, NJ, 33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020, Edinburgh, United Kingdom, 4/05/20. https://doi.org/10.1109/ICMTS48187.2020.9107933

Diode design for studying material defect distributions with avalanche-mode light emission. / Krakers, M.; Knezevic, T.; Batenburg, K.M. et al.
2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings. Piscataway, NJ: IEEE, 2020. 9107933 (IEEE International Conference on Microelectronic Test Structures; Vol. 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Diode design for studying material defect distributions with avalanche-mode light emission

AU - Krakers, M.

AU - Knezevic, T.

AU - Batenburg, K.M.

AU - Liu, X.

AU - Nanver, L.K.

N1 - Conference code: 33

PY - 2020/6/4

Y1 - 2020/6/4

N2 - Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.

AB - Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.

KW - 22/3 OA procedure

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DO - 10.1109/ICMTS48187.2020.9107933

M3 - Conference contribution

AN - SCOPUS:85086453243

SN - 978-1-7281-4009-4

T3 - IEEE International Conference on Microelectronic Test Structures

BT - 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings

PB - IEEE

CY - Piscataway, NJ

T2 - 33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020

Y2 - 4 May 2020 through 18 May 2020

ER -

Krakers M, Knezevic T, Batenburg KM, Liu X, Nanver LK. Diode design for studying material defect distributions with avalanche-mode light emission. In 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings. Piscataway, NJ: IEEE. 2020. 9107933. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS48187.2020.9107933

Diode design for studying material defect distributions with avalanche-mode light emission

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