Abstract
Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions.
Original language | English |
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Title of host publication | 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Chapter | 9.2 |
ISBN (Electronic) | 978-1-7281-4008-7 |
ISBN (Print) | 978-1-7281-4009-4 |
DOIs | |
Publication status | Published - 4 Jun 2020 |
Event | 33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 - Online, Edinburgh, United Kingdom Duration: 4 May 2020 → 18 May 2020 Conference number: 33 |
Publication series
Name | IEEE International Conference on Microelectronic Test Structures |
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Publisher | IEEE |
Volume | 2020 |
ISSN (Print) | 1071-9032 |
ISSN (Electronic) | 2158-1029 |
Conference
Conference | 33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 |
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Abbreviated title | ICMTS 2020 |
Country/Territory | United Kingdom |
City | Edinburgh |
Period | 4/05/20 → 18/05/20 |
Keywords
- 22/3 OA procedure