Abstract
Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate bath on both n+ and p+-type silicon wafers, where a series of trenches with different widths had been previously etched by plasma etching. A new, reliable and simple procedure based on the removal of the native oxide layer is presented which allows uniform plating of patterned substrates.
Original language | Undefined |
---|---|
Title of host publication | 16th MicroMechanics Europe Workshop, MME 2005 |
Place of Publication | Amsterdam |
Publisher | Chalmer University |
Pages | 1-4 |
Number of pages | 4 |
ISBN (Print) | 978-0-4445-1037-2 |
Publication status | Published - Sept 2005 |
Event | 16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden Duration: 4 Sept 2005 → 6 Sept 2005 Conference number: 16 |
Publication series
Name | |
---|---|
Publisher | Chalmer University |
Workshop
Workshop | 16th MicroMechanics Europe Workshop, MME 2005 |
---|---|
Abbreviated title | MME |
Country/Territory | Sweden |
City | Göteborg |
Period | 4/09/05 → 6/09/05 |
Keywords
- METIS-228386
- IR-76054
- MEMS
- EWI-19592
- electroforming
- Nickel
- silicon electroplating