Direct Electroplating on Highly Doped Patterned Silicon Wafers

Laura Dolores Vargas Llona, Henricus V. Jansen, Michael Curt Elwenspoek

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    Abstract

    Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate bath on both n+ and p+-type silicon wafers, where a series of trenches with different widths had been previously etched by plasma etching. A new, reliable and simple procedure based on the removal of the native oxide layer is presented which allows uniform plating of patterned substrates.
    Original languageUndefined
    Title of host publication16th MicroMechanics Europe Workshop, MME 2005
    Place of PublicationAmsterdam
    PublisherChalmer University
    Pages1-4
    Number of pages4
    ISBN (Print)978-0-4445-1037-2
    Publication statusPublished - Sep 2005
    Event16th MicroMechanics Europe Workshop, MME 2005 - Göteborg, Sweden
    Duration: 4 Sep 20056 Sep 2005
    Conference number: 16

    Publication series

    Name
    PublisherChalmer University

    Workshop

    Workshop16th MicroMechanics Europe Workshop, MME 2005
    Abbreviated titleMME
    CountrySweden
    CityGöteborg
    Period4/09/056/09/05

    Keywords

    • METIS-228386
    • IR-76054
    • MEMS
    • EWI-19592
    • electroforming
    • Nickel
    • silicon electroplating

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