Direct measurement of piezoelectric properties of Sol-Gel PZT films

Johannes G.E. Gardeniers, A.G.B.J. Verholen, A.G.B.J. Verholen, Niels Roelof Tas, Michael Curt Elwenspoek

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Abstract

PbZr0.53Ti0.47O3 films were deposited on Si-SiO2-Ta-Pt substrates via a conventional sol-gel procedure. Electrical properties of the films were: resistivity ca. 5 × 1011 Ωcm, relative dielectric permittivity 900-1100, remnant polarization ca. 20 μC/cm2, breakdown electric field larger than 50 MV/m. The deflection amplitude of piezoelectrically excited Si cantilevers, covered with SiO2-Ta-Pt-PZT-Al, was determined with the aid of a heterodyne Mach-Zehnder interferometer. The piezoelectric strain constant d31 of the PZT films was determined from the amplitude measured at frequencies far below the first mechanical resonance (quasi-static method). The d31 constant was also determined from the deflection amplitude at the first mechanical resonance and the quality factor of the cantilever. Measured values ranged from -30 pC/N for unpoled films to -160 pC/N for films poled at room temperature and 40 MV/m.
Original languageUndefined
Pages (from-to)S1573-S1577
Number of pages5
JournalJournal of the Korean Physical Society
Volume32
Issue number32
Publication statusPublished - 1998

Keywords

  • METIS-111517
  • IR-14261
  • EWI-13365

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