Discussiestuk: "1/f ruis in de geschakelde toestand: nuttig, interessant of beide?"

A.P. van der Wel; S.L.J. Gierkink; E.A.M. Klumperink; H. Wallinga; R.F. Wassenaar

Discussiestuk: "1/f ruis in de geschakelde toestand: nuttig, interessant of beide?"

A.P. van der Wel, S.L.J. Gierkink, E.A.M. Klumperink, H. Wallinga, R.F. Wassenaar

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Abstract

Measurement results are presented that show N-channel MOSFET 1/f noise to decrease under switched bias conditions. A brief outline of a possible explanation is given. The significance of these measurements is twofold: on the one hand the noise decrease may be exploited in low noise circuit design, on the other, it yields valuable insights into 1/f generating processes in the MOS transistor.

Original language	Dutch
Pages (from-to)	14-22
Number of pages	9
Journal	Tijdschrift van het Nederlands Elektronica- en Radiogenootschap
Volume	63
Issue number	1
Publication status	Published - 1998

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title = "Discussiestuk: {"}1/f ruis in de geschakelde toestand: nuttig, interessant of beide?{"}",

abstract = "Measurement results are presented that show N-channel MOSFET 1/f noise to decrease under switched bias conditions. A brief outline of a possible explanation is given. The significance of these measurements is twofold: on the one hand the noise decrease may be exploited in low noise circuit design, on the other, it yields valuable insights into 1/f generating processes in the MOS transistor.",

author = "\{van der Wel\}, A.P. and S.L.J. Gierkink and E.A.M. Klumperink and H. Wallinga and R.F. Wassenaar",

year = "1998",

language = "Dutch",

volume = "63",

pages = "14--22",

journal = "Tijdschrift van het Nederlands Elektronica- en Radiogenootschap",

issn = "0374-3853",

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T1 - Discussiestuk: "1/f ruis in de geschakelde toestand: nuttig, interessant of beide?"

AU - van der Wel, A.P.

AU - Gierkink, S.L.J.

AU - Klumperink, E.A.M.

AU - Wallinga, H.

AU - Wassenaar, R.F.

PY - 1998

Y1 - 1998

N2 - Measurement results are presented that show N-channel MOSFET 1/f noise to decrease under switched bias conditions. A brief outline of a possible explanation is given. The significance of these measurements is twofold: on the one hand the noise decrease may be exploited in low noise circuit design, on the other, it yields valuable insights into 1/f generating processes in the MOS transistor.

AB - Measurement results are presented that show N-channel MOSFET 1/f noise to decrease under switched bias conditions. A brief outline of a possible explanation is given. The significance of these measurements is twofold: on the one hand the noise decrease may be exploited in low noise circuit design, on the other, it yields valuable insights into 1/f generating processes in the MOS transistor.

M3 - Article

SN - 0374-3853

VL - 63

SP - 14

EP - 22

JO - Tijdschrift van het Nederlands Elektronica- en Radiogenootschap

JF - Tijdschrift van het Nederlands Elektronica- en Radiogenootschap

IS - 1

ER -