Dislocation formation and B transient diffusion in C coimplanted Si

A. Cacciato, J.G.E. Klappe, N.E.B. Cowern, W. Vandervost, L.P. Biro, J.S. Custer, F.W. Saris

    Research output: Contribution to journalArticleAcademicpeer-review

    30 Citations (Scopus)
    Original languageUndefined
    Pages (from-to)2314-2325
    JournalJournal of Applied Physics
    Volume79
    Issue number5
    Publication statusPublished - 1996

    Keywords

    • METIS-111993

    Cite this

    Cacciato, A., Klappe, J. G. E., Cowern, N. E. B., Vandervost, W., Biro, L. P., Custer, J. S., & Saris, F. W. (1996). Dislocation formation and B transient diffusion in C coimplanted Si. Journal of Applied Physics, 79(5), 2314-2325.