Distributed field plate effects in split-gate trench MOSFETs

R. Tambone; A. Ferrara; F. Magrini; A. Hoffmann; A. Wood; G. Noebauer; E. Gondro; R. J.E. Hueting

doi:10.1109/ICMTS55420.2023.10094167

Distributed field plate effects in split-gate trench MOSFETs

R. Tambone^*, A. Ferrara, F. Magrini, A. Hoffmann, A. Wood, G. Noebauer, E. Gondro, R. J.E. Hueting

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

17 Downloads (Pure)

Abstract

Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with TCAD and SPICE simulations to predict the space and time evolution of the field plate potential during transients.

Original language	English
Title of host publication	2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023
Publisher	IEEE
ISBN (Electronic)	9798350346534
DOIs	https://doi.org/10.1109/ICMTS55420.2023.10094167
Publication status	Published - 10 Apr 2023
Event	35th International Conference on Microelectronic Test Structure, ICMTS 2023 - Tokyo, Japan Duration: 27 Mar 2023 → 30 Mar 2023 Conference number: 35

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2023-March

Conference

Conference	35th International Conference on Microelectronic Test Structure, ICMTS 2023
Abbreviated title	ICMTS 2023
Country/Territory	Japan
City	Tokyo
Period	27/03/23 → 30/03/23

Keywords

2024 OA procedure
Field plate
MOSFET
Split-gate
TCAD
Test structure
TLP
Distributed effects

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10.1109/ICMTS55420.2023.10094167

Distributed_field_plate_effects_in_split-gate_trench_MOSFETsFinal published version, 1.05 MBLicence: Taverne

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Tambone, R., Ferrara, A., Magrini, F., Hoffmann, A., Wood, A., Noebauer, G., Gondro, E., & Hueting, R. J. E. (2023). Distributed field plate effects in split-gate trench MOSFETs. In 2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023 (IEEE International Conference on Microelectronic Test Structures; Vol. 2023-March). IEEE. https://doi.org/10.1109/ICMTS55420.2023.10094167

@inproceedings{bdd0503740ad4a7ba4459949a431c9b5,

title = "Distributed field plate effects in split-gate trench MOSFETs",

abstract = "Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with TCAD and SPICE simulations to predict the space and time evolution of the field plate potential during transients.",

keywords = "2024 OA procedure, Field plate, MOSFET, Split-gate, TCAD, Test structure, TLP, Distributed effects",

author = "R. Tambone and A. Ferrara and F. Magrini and A. Hoffmann and A. Wood and G. Noebauer and E. Gondro and Hueting, {R. J.E.}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 35th International Conference on Microelectronic Test Structure, ICMTS 2023, ICMTS 2023 ; Conference date: 27-03-2023 Through 30-03-2023",

year = "2023",

month = apr,

day = "10",

doi = "10.1109/ICMTS55420.2023.10094167",

language = "English",

series = "IEEE International Conference on Microelectronic Test Structures",

publisher = "IEEE",

booktitle = "2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023",

address = "United States",

}

Tambone, R, Ferrara, A, Magrini, F, Hoffmann, A, Wood, A, Noebauer, G, Gondro, E & Hueting, RJE 2023, Distributed field plate effects in split-gate trench MOSFETs. in 2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023. IEEE International Conference on Microelectronic Test Structures, vol. 2023-March, IEEE, 35th International Conference on Microelectronic Test Structure, ICMTS 2023, Tokyo, Japan, 27/03/23. https://doi.org/10.1109/ICMTS55420.2023.10094167

Distributed field plate effects in split-gate trench MOSFETs. / Tambone, R.; Ferrara, A.; Magrini, F. et al.
2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023. IEEE, 2023. (IEEE International Conference on Microelectronic Test Structures; Vol. 2023-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Distributed field plate effects in split-gate trench MOSFETs

AU - Tambone, R.

AU - Ferrara, A.

AU - Magrini, F.

AU - Hoffmann, A.

AU - Wood, A.

AU - Noebauer, G.

AU - Gondro, E.

AU - Hueting, R. J.E.

N1 - Conference code: 35

PY - 2023/4/10

Y1 - 2023/4/10

N2 - Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with TCAD and SPICE simulations to predict the space and time evolution of the field plate potential during transients.

AB - Fast electric transients can cause distributed effects inside trench MOSFETs possibly resulting in device failure. A new test structure to study those distributed effects, combined with a new Transmission-Line Pulse (TLP) setup, is presented. On-wafer TLP measurements are performed and combined with TCAD and SPICE simulations to predict the space and time evolution of the field plate potential during transients.

KW - 2024 OA procedure

KW - Field plate

KW - MOSFET

KW - Split-gate

KW - TCAD

KW - Test structure

KW - TLP

KW - Distributed effects

UR - http://www.scopus.com/inward/record.url?scp=85153580582&partnerID=8YFLogxK

U2 - 10.1109/ICMTS55420.2023.10094167

DO - 10.1109/ICMTS55420.2023.10094167

M3 - Conference contribution

AN - SCOPUS:85153580582

T3 - IEEE International Conference on Microelectronic Test Structures

BT - 2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023

PB - IEEE

T2 - 35th International Conference on Microelectronic Test Structure, ICMTS 2023

Y2 - 27 March 2023 through 30 March 2023

ER -

Distributed field plate effects in split-gate trench MOSFETs

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